Taniguchi T - Search Results

1

Signatures of moiré trions in WSe₂/MoSe₂ heterobilayers.

Liu E, Barré E, van Baren J, Wilson M, Taniguchi T, Watanabe K, Cui YT, Gabor NM, Heinz TF, Chang YC, Lui CH. Liu E, et al. Among authors: taniguchi t. Nature. 2021 Jun;594(7861):46-50. doi: 10.1038/s41586-021-03541-z. Epub 2021 Jun 2. Nature. 2021. PMID: 34079140

2

Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal.

Watanabe K, Taniguchi T, Kanda H. Watanabe K, et al. Among authors: taniguchi t. Nat Mater. 2004 Jun;3(6):404-9. doi: 10.1038/nmat1134. Epub 2004 May 23. Nat Mater. 2004. PMID: 15156198

3

Deep ultraviolet light-emitting hexagonal boron nitride synthesized at atmospheric pressure.

Kubota Y, Watanabe K, Tsuda O, Taniguchi T. Kubota Y, et al. Among authors: taniguchi t. Science. 2007 Aug 17;317(5840):932-4. doi: 10.1126/science.1144216. Science. 2007. PMID: 17702939

4

Hot carrier-assisted intrinsic photoresponse in graphene.

Gabor NM, Song JC, Ma Q, Nair NL, Taychatanapat T, Watanabe K, Taniguchi T, Levitov LS, Jarillo-Herrero P. Gabor NM, et al. Among authors: taniguchi t. Science. 2011 Nov 4;334(6056):648-52. doi: 10.1126/science.1211384. Epub 2011 Oct 6. Science. 2011. PMID: 21979935

5

Effective cleaning of hexagonal boron nitride for graphene devices.

Garcia AG, Neumann M, Amet F, Williams JR, Watanabe K, Taniguchi T, Goldhaber-Gordon D. Garcia AG, et al. Among authors: taniguchi t. Nano Lett. 2012 Sep 12;12(9):4449-54. doi: 10.1021/nl3011726. Epub 2012 Aug 20. Nano Lett. 2012. PMID: 22866696

6

Understanding and controlling the substrate effect on graphene electron-transfer chemistry via reactivity imprint lithography.

Wang QH, Jin Z, Kim KK, Hilmer AJ, Paulus GL, Shih CJ, Ham MH, Sanchez-Yamagishi JD, Watanabe K, Taniguchi T, Kong J, Jarillo-Herrero P, Strano MS. Wang QH, et al. Among authors: taniguchi t. Nat Chem. 2012 Sep;4(9):724-32. doi: 10.1038/nchem.1421. Epub 2012 Aug 12. Nat Chem. 2012. PMID: 22914193

7

Optical probing of the electronic interaction between graphene and hexagonal boron nitride.

Ahn G, Kim HR, Ko TY, Choi K, Watanabe K, Taniguchi T, Hong BH, Ryu S. Ahn G, et al. Among authors: taniguchi t. ACS Nano. 2013 Feb 26;7(2):1533-41. doi: 10.1021/nn305306n. Epub 2013 Jan 17. ACS Nano. 2013. PMID: 23301838

8

Thermal conductivity and phonon transport in suspended few-layer hexagonal boron nitride.

Jo I, Pettes MT, Kim J, Watanabe K, Taniguchi T, Yao Z, Shi L. Jo I, et al. Among authors: taniguchi t. Nano Lett. 2013 Feb 13;13(2):550-4. doi: 10.1021/nl304060g. Epub 2013 Jan 28. Nano Lett. 2013. PMID: 23346863

9

Epitaxial growth of single-domain graphene on hexagonal boron nitride.

Yang W, Chen G, Shi Z, Liu CC, Zhang L, Xie G, Cheng M, Wang D, Yang R, Shi D, Watanabe K, Taniguchi T, Yao Y, Zhang Y, Zhang G. Yang W, et al. Among authors: taniguchi t. Nat Mater. 2013 Sep;12(9):792-7. doi: 10.1038/nmat3695. Epub 2013 Jul 14. Nat Mater. 2013. PMID: 23852399

10

Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates.

Chan MY, Komatsu K, Li SL, Xu Y, Darmawan P, Kuramochi H, Nakaharai S, Aparecido-Ferreira A, Watanabe K, Taniguchi T, Tsukagoshi K. Chan MY, et al. Among authors: taniguchi t. Nanoscale. 2013 Oct 21;5(20):9572-6. doi: 10.1039/c3nr03220e. Nanoscale. 2013. PMID: 23986323

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