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An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology.
Micromachines (Basel). 2021 May 12;12(5):549. doi: 10.3390/mi12050549.
Micromachines (Basel). 2021.
PMID: 34065962
Free PMC article.
Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes.
Pérez-Martín E, González T, Vaquero D, Sánchez-Martín H, Gaquière C, Raposo VJ, Mateos J, Iñiguez-de-la-Torre I.
Pérez-Martín E, et al. Among authors: gaquiere c.
Nanotechnology. 2020 Oct 2;31(40):405204. doi: 10.1088/1361-6528/ab9d44. Epub 2020 Jun 16.
Nanotechnology. 2020.
PMID: 32544891
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Drone Detection and Tracking Using RF Identification Signals.
Aouladhadj D, Kpre E, Deniau V, Kharchouf A, Gransart C, Gaquière C.
Aouladhadj D, et al. Among authors: gaquiere c.
Sensors (Basel). 2023 Sep 4;23(17):7650. doi: 10.3390/s23177650.
Sensors (Basel). 2023.
PMID: 37688105
Free PMC article.
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[The work placement for developing skills].
Fourcade B, Marie I, Resseguier P, Martin AM, Zbyr L, Gaquière C.
Fourcade B, et al. Among authors: gaquiere c.
Rev Infirm. 2013 May;(191):20-1.
Rev Infirm. 2013.
PMID: 23776978
French.
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