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Electron Doping Effect in the Resistive Switching Properties of Al/Gd1-xCaxMnO3/Au Memristor Devices.
ACS Appl Mater Interfaces. 2021 Apr 21;13(15):18365-18371. doi: 10.1021/acsami.1c02963. Epub 2021 Apr 8.
ACS Appl Mater Interfaces. 2021.
PMID: 33832220
Free PMC article.
Metastable ferromagnetic flux closure-type domains in strain relaxed Gd0.1Ca0.9MnO3thin films.
Schulman A, Palonen H, Lähteenlahti V, Beiranvand A, Huhtinen H, Paturi P.
Schulman A, et al. Among authors: lahteenlahti v.
J Phys Condens Matter. 2020 Oct 20;33(3). doi: 10.1088/1361-648X/abbe7d.
J Phys Condens Matter. 2020.
PMID: 33017816
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Tuned AFM-FM coupling by the formation of vacancy complex in Gd0.6Ca0.4MnO3thin film lattice.
Beiranvand A, Liedke MO, Haalisto C, Lähteenlahti V, Schulman A, Granroth S, Palonen H, Butterling M, Wagner A, Huhtinen H, Paturi P.
Beiranvand A, et al. Among authors: lahteenlahti v.
J Phys Condens Matter. 2021 May 24;33(25). doi: 10.1088/1361-648X/abf9ba.
J Phys Condens Matter. 2021.
PMID: 33878744
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Manipulating magnetic and magnetoresistive properties by oxygen vacancy complexes in GCMO thin films.
Beiranvand A, Liedke MO, Haalisto C, Lähteenlahti V, Schulman A, Granroth S, Palonen H, Butterling M, Wagner A, Huhtinen H, Paturi P.
Beiranvand A, et al. Among authors: lahteenlahti v.
J Phys Condens Matter. 2022 Feb 10;34(15). doi: 10.1088/1361-648X/ac4eac.
J Phys Condens Matter. 2022.
PMID: 35078169
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