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High-performance ambipolar MoS2transistor enabled by indium edge contacts.
Nanotechnology. 2021 Mar 2;32(21). doi: 10.1088/1361-6528/abe438.
Nanotechnology. 2021.
PMID: 33556924
Self-Forming p-n Junction Diode Realized with WSe2 Surface and Edge Dual Contacts.
Le Thi HY, Ngo TD, Phan NAN, Yoo WJ, Watanabe K, Taniguchi T, Aoki N, Bird JP, Kim GH.
Le Thi HY, et al.
Small. 2022 Nov;18(46):e2204547. doi: 10.1002/smll.202204547. Epub 2022 Oct 10.
Small. 2022.
PMID: 36216594
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Doping-Free High-Performance Photovoltaic Effect in a WSe2 Lateral p-n Homojunction Formed by Contact Engineering.
Le Thi HY, Ngo TD, Phan NAN, Shin H, Uddin I, Venkatesan A, Liang CT, Aoki N, Yoo WJ, Watanabe K, Taniguchi T, Kim GH.
Le Thi HY, et al.
ACS Appl Mater Interfaces. 2023 Jul 26;15(29):35342-35349. doi: 10.1021/acsami.3c05451. Epub 2023 Jul 13.
ACS Appl Mater Interfaces. 2023.
PMID: 37442799
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