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Growth Kinetics and Atomistic Mechanisms of Native Oxidation of ZrSxSe2-x and MoS2 Crystals.
Nano Lett. 2020 Dec 9;20(12):8592-8599. doi: 10.1021/acs.nanolett.0c03263. Epub 2020 Nov 12.
Nano Lett. 2020.
PMID: 33180506
Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial graphene.
Hollander MJ, Labella M, Hughes ZR, Zhu M, Trumbull KA, Cavalero R, Snyder DW, Wang X, Hwang E, Datta S, Robinson JA.
Hollander MJ, et al.
Nano Lett. 2011 Sep 14;11(9):3601-7. doi: 10.1021/nl201358y. Epub 2011 Aug 4.
Nano Lett. 2011.
PMID: 21805989
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Integration of hexagonal boron nitride with quasi-freestanding epitaxial graphene: toward wafer-scale, high-performance devices.
Bresnehan MS, Hollander MJ, Wetherington M, LaBella M, Trumbull KA, Cavalero R, Snyder DW, Robinson JA.
Bresnehan MS, et al.
ACS Nano. 2012 Jun 26;6(6):5234-41. doi: 10.1021/nn300996t. Epub 2012 May 8.
ACS Nano. 2012.
PMID: 22545808
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