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Investigation of the effect of the doping order in GaN nanowire p-n junctions grown by molecular-beam epitaxy.
Nanotechnology. 2021 Feb 19;32(8):085705. doi: 10.1088/1361-6528/abc91a.
Nanotechnology. 2021.
PMID: 33171444
Electromechanical conversion efficiency of GaN NWs: critical influence of the NW stiffness, the Schottky nano-contact and the surface charge effects.
Gogneau N, Chrétien P, Sodhi T, Couraud L, Leroy L, Travers L, Harmand JC, Julien FH, Tchernycheva M, Houzé F.
Gogneau N, et al. Among authors: sodhi t.
Nanoscale. 2022 Mar 31;14(13):4965-4976. doi: 10.1039/d1nr07863a.
Nanoscale. 2022.
PMID: 35297939
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