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Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices.
Yates L, Anderson J, Gu X, Lee C, Bai T, Mecklenburg M, Aoki T, Goorsky MS, Kuball M, Piner EL, Graham S. Yates L, et al. Among authors: goorsky ms. ACS Appl Mater Interfaces. 2018 Jul 18;10(28):24302-24309. doi: 10.1021/acsami.8b07014. Epub 2018 Jul 6. ACS Appl Mater Interfaces. 2018. PMID: 29939717
Thermal Boundary Conductance Across Heteroepitaxial ZnO/GaN Interfaces: Assessment of the Phonon Gas Model.
Gaskins JT, Kotsonis G, Giri A, Ju S, Rohskopf A, Wang Y, Bai T, Sachet E, Shelton CT, Liu Z, Cheng Z, Foley BM, Graham S, Luo T, Henry A, Goorsky MS, Shiomi J, Maria JP, Hopkins PE. Gaskins JT, et al. Among authors: goorsky ms. Nano Lett. 2018 Dec 12;18(12):7469-7477. doi: 10.1021/acs.nanolett.8b02837. Epub 2018 Nov 21. Nano Lett. 2018. PMID: 30412411
Corrrection to Thermal Boundary Conductance Across Heteroepitaxial ZnO/GaN Interfaces: Assessment of the Phonon Gas Model.
Gaskins JT, Kotsonis G, Giri A, Ju S, Rohskopf A, Wang Y, Bai T, Sachet E, Shelton CT, Liu Z, Cheng Z, Foley BM, Graham S, Luo T, Henry A, Goorsky MS, Shiomi J, Maria JP, Hopkins PE. Gaskins JT, et al. Among authors: goorsky ms. Nano Lett. 2019 Feb 13;19(2):1408. doi: 10.1021/acs.nanolett.9b00022. Epub 2019 Jan 23. Nano Lett. 2019. PMID: 30673236 No abstract available.
32 results