Bulk-doping-controlled implantation site of boron in silicon.
Metzner H, Sulzer G, Seelinger W, Ittermann B, Frank H, Fischer B, Ergezinger K, Dippel R, Diehl E, Stöckmann H, Ackermann H.
Metzner H, et al. Among authors: ergezinger k.
Phys Rev B Condens Matter. 1990 Dec 15;42(17):11419-11422. doi: 10.1103/physrevb.42.11419.
Phys Rev B Condens Matter. 1990.
PMID: 9995445
No abstract available.