Stolichnov I - Search Results

1

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects.

Saeidi A, Rosca T, Memisevic E, Stolichnov I, Cavalieri M, Wernersson LE, Ionescu AM. Saeidi A, et al. Among authors: stolichnov i. Nano Lett. 2020 May 13;20(5):3255-3262. doi: 10.1021/acs.nanolett.9b05356. Epub 2020 Apr 23. Nano Lett. 2020. PMID: 32293188 Free PMC article.

2

Van der Waals MoS₂/VO₂ heterostructure junction with tunable rectifier behavior and efficient photoresponse.

Oliva N, Casu EA, Yan C, Krammer A, Rosca T, Magrez A, Stolichnov I, Schueler A, Martin OJF, Ionescu AM. Oliva N, et al. Among authors: stolichnov i. Sci Rep. 2017 Oct 27;7(1):14250. doi: 10.1038/s41598-017-12950-y. Sci Rep. 2017. PMID: 29079744 Free PMC article.

3

Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance.

Saeidi A, Jazaeri F, Stolichnov I, Luong GV, Zhao QT, Mantl S, Ionescu AM. Saeidi A, et al. Among authors: stolichnov i. Nanotechnology. 2018 Mar 2;29(9):095202. doi: 10.1088/1361-6528/aaa590. Nanotechnology. 2018. PMID: 29373324

4

Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in Hf _xZr_{(1- x)}O₂ Ultrathin Capacitors.

Stolichnov I, Cavalieri M, Colla E, Schenk T, Mittmann T, Mikolajick T, Schroeder U, Ionescu AM. Stolichnov I, et al. ACS Appl Mater Interfaces. 2018 Sep 12;10(36):30514-30521. doi: 10.1021/acsami.8b07988. Epub 2018 Aug 27. ACS Appl Mater Interfaces. 2018. PMID: 30105905

5

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors.

Saeidi A, Jazaeri F, Stolichnov I, Enz CC, Ionescu AM. Saeidi A, et al. Among authors: stolichnov i. Sci Rep. 2019 Jun 24;9(1):9105. doi: 10.1038/s41598-019-45628-8. Sci Rep. 2019. PMID: 31235799 Free PMC article.

6

Giant switchable non thermally-activated conduction in 180° domain walls in tetragonal Pb(Zr,Ti)O₃.

Risch F, Tikhonov Y, Lukyanchuk I, Ionescu AM, Stolichnov I. Risch F, et al. Among authors: stolichnov i. Nat Commun. 2022 Nov 24;13(1):7239. doi: 10.1038/s41467-022-34777-6. Nat Commun. 2022. PMID: 36433950 Free PMC article.

7

Bent Ferroelectric Domain Walls as Reconfigurable Metallic-Like Channels.

Stolichnov I, Feigl L, McGilly LJ, Sluka T, Wei XK, Colla E, Crassous A, Shapovalov K, Yudin P, Tagantsev AK, Setter N. Stolichnov I, et al. Nano Lett. 2015 Dec 9;15(12):8049-55. doi: 10.1021/acs.nanolett.5b03450. Epub 2015 Nov 24. Nano Lett. 2015. PMID: 26555142

8

Nonvolatile gate effect in a ferroelectric-semiconductor quantum well.

Stolichnov I, Colla E, Setter N, Wojciechowski T, Janik E, Karczewski G. Stolichnov I, et al. Phys Rev Lett. 2006 Dec 15;97(24):247601. doi: 10.1103/PhysRevLett.97.247601. Epub 2006 Dec 13. Phys Rev Lett. 2006. PMID: 17280323

9

Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers.

Stolichnov I, Riester SW, Mikheev E, Setter N, Rushforth AW, Edmonds KW, Campion RP, Foxon CT, Gallagher BL, Jungwirth T, Trodahl HJ. Stolichnov I, et al. Nanotechnology. 2011 Jun 24;22(25):254004. doi: 10.1088/0957-4484/22/25/254004. Epub 2011 May 16. Nanotechnology. 2011. PMID: 21572188

10

Non-volatile ferroelectric control of ferromagnetism in (Ga,Mn)As.

Stolichnov I, Riester SW, Trodahl HJ, Setter N, Rushforth AW, Edmonds KW, Campion RP, Foxon CT, Gallagher BL, Jungwirth T. Stolichnov I, et al. Nat Mater. 2008 Jun;7(6):464-7. doi: 10.1038/nmat2185. Epub 2008 May 4. Nat Mater. 2008. PMID: 18454153

Save citations to file

Email citations

Send citations to clipboard

Add to Collections

Add to My Bibliography

Create a file for external citation management software

Your saved search

Your RSS Feed

My NCBI Filters

Text availability

Article attribute

Article type

Publication date

13 results

Search Page