Search Page
Save citations to file
Email citations
Send citations to clipboard
Add to Collections
Add to My Bibliography
Create a file for external citation management software
Your saved search
Your RSS Feed
Search Results
3 results
Filters applied: . Clear all
Results are displayed in a computed author sort order.
The Results By Year timeline is not available.
Page 1
Fabrication of a Nb-Doped β-Ga2O3 Nanobelt Field-Effect Transistor and Its Low-Temperature Behavior.
ACS Appl Mater Interfaces. 2020 Feb 19;12(7):8437-8445. doi: 10.1021/acsami.9b20499. Epub 2020 Feb 10.
ACS Appl Mater Interfaces. 2020.
PMID: 32003210
Effective Suppression of MIS Interface Defects Using Boron Nitride toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.
Li XX, Sun Y, Zeng G, Li YC, Zhang R, Sai QL, Xia CT, Zhang DW, Yang YG, Lu HL.
Li XX, et al. Among authors: sai ql.
J Phys Chem Lett. 2022 Apr 21;13(15):3377-3381. doi: 10.1021/acs.jpclett.2c00722. Epub 2022 Apr 11.
J Phys Chem Lett. 2022.
PMID: 35404057
Item in Clipboard
The Spatial Correlation and Anisotropy of β-(AlxGa1-x)2O3 Single Crystal.
Li L, Wan L, Xia C, Sai Q, Talwar DN, Feng ZC, Liu H, Jiang J, Li P.
Li L, et al.
Materials (Basel). 2023 Jun 8;16(12):4269. doi: 10.3390/ma16124269.
Materials (Basel). 2023.
PMID: 37374452
Free PMC article.
Item in Clipboard
Cite
Cite