Whang D - Search Results

1

Clean Interface Contact Using a ZnO Interlayer for Low-Contact-Resistance MoS₂ Transistors.

Jang J, Kim Y, Chee SS, Kim H, Whang D, Kim GH, Yun SJ. Jang J, et al. Among authors: whang d. ACS Appl Mater Interfaces. 2020 Jan 29;12(4):5031-5039. doi: 10.1021/acsami.9b18591. Epub 2020 Jan 13. ACS Appl Mater Interfaces. 2020. PMID: 31891246

2

Metastable Ge1-xCx alloy nanowires.

Kim BS, Lee JH, Son K, Hwang SW, Choi BL, Lee EK, Kim JM, Whang D. Kim BS, et al. Among authors: whang d. ACS Appl Mater Interfaces. 2012 Feb;4(2):805-10. doi: 10.1021/am201446u. Epub 2012 Jan 17. ACS Appl Mater Interfaces. 2012. PMID: 22201458

3

Ultrathin organic solar cells with graphene doped by ferroelectric polarization.

Kim K, Bae SH, Toh CT, Kim H, Cho JH, Whang D, Lee TW, Özyilmaz B, Ahn JH. Kim K, et al. Among authors: whang d. ACS Appl Mater Interfaces. 2014 Mar 12;6(5):3299-304. doi: 10.1021/am405270y. Epub 2014 Feb 24. ACS Appl Mater Interfaces. 2014. PMID: 24521002

4

Reliability enhancement of germanium nanowires using graphene as a protective layer: aspect of thermal stability.

Lee JH, Choi SH, Patole SP, Jang Y, Heo K, Joo WJ, Yoo JB, Hwang SW, Whang D. Lee JH, et al. Among authors: whang d. ACS Appl Mater Interfaces. 2014 Apr 9;6(7):5069-74. doi: 10.1021/am5001294. Epub 2014 Mar 21. ACS Appl Mater Interfaces. 2014. PMID: 24617670

5

High performance self-gating graphene/MoS₂ diode enabled by asymmetric contacts.

Khan MA, Rathi S, Lee C, Kim Y, Kim H, Whang D, Yun SJ, Youn DH, Watanabe K, Taniguchi T, Kim GH. Khan MA, et al. Among authors: whang d. Nanotechnology. 2018 Sep 28;29(39):395201. doi: 10.1088/1361-6528/aad0af. Epub 2018 Jul 3. Nanotechnology. 2018. PMID: 29968581

6

Unraveling the Factors Affecting the Electrochemical Performance of MoS₂-Carbon Composite Catalysts for Hydrogen Evolution Reaction: Surface Defect and Electrical Resistance of Carbon Supports.

Hyeon Y, Jung SH, Jang W, Kim M, Kim BS, Lee JH, Nandanapalli KR, Jung N, Whang D. Hyeon Y, et al. Among authors: whang d. ACS Appl Mater Interfaces. 2019 Feb 6;11(5):5037-5045. doi: 10.1021/acsami.8b19072. Epub 2019 Jan 24. ACS Appl Mater Interfaces. 2019. PMID: 30628795

7

Photogating in the Graphene-Dye-Graphene Sandwich Heterostructure.

Lee Y, Kim H, Kim S, Whang D, Cho JH. Lee Y, et al. Among authors: whang d. ACS Appl Mater Interfaces. 2019 Jul 3;11(26):23474-23481. doi: 10.1021/acsami.9b05280. Epub 2019 Jun 24. ACS Appl Mater Interfaces. 2019. PMID: 31136704

8

Solution-Processed MoS₂ Film with Functional Interfaces via Precursor-Assisted Chemical Welding.

Kim J, Kim S, Cho YS, Choi M, Jung SH, Cho JH, Whang D, Kang J. Kim J, et al. Among authors: whang d. ACS Appl Mater Interfaces. 2021 Mar 17;13(10):12221-12229. doi: 10.1021/acsami.1c00159. Epub 2021 Mar 3. ACS Appl Mater Interfaces. 2021. PMID: 33657809

9

Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS₂ /MoTe₂ Heterostructures.

Kim J, Venkatesan A, Kim H, Kim Y, Whang D, Kim GH. Kim J, et al. Among authors: whang d. Adv Sci (Weinh). 2021 Jun;8(11):e2100102. doi: 10.1002/advs.202100102. Epub 2021 Mar 15. Adv Sci (Weinh). 2021. PMID: 34105270 Free PMC article.

10

Enhanced Performance of WS₂ Field-Effect Transistor through Mono and Bilayer h-BN Tunneling Contacts.

Phan NAN, Noh H, Kim J, Kim Y, Kim H, Whang D, Aoki N, Watanabe K, Taniguchi T, Kim GH. Phan NAN, et al. Among authors: whang d. Small. 2022 Apr;18(13):e2105753. doi: 10.1002/smll.202105753. Epub 2022 Feb 3. Small. 2022. PMID: 35112797

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