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Nanoscale electrical analyses of axial-junction GaAsP nanowires for solar cell applications.
Nanotechnology. 2020 Apr 3;31(14):145708. doi: 10.1088/1361-6528/ab62c9. Epub 2019 Dec 17.
Nanotechnology. 2020.
PMID: 31846937
Investigation of the effect of the doping order in GaN nanowire p-n junctions grown by molecular-beam epitaxy.
Saket O, Wang J, Amador-Mendez N, Morassi M, Kunti A, Bayle F, Collin S, Jollivet A, Babichev A, Sodhi T, Harmand JC, Julien FH, Gogneau N, Tchernycheva M.
Saket O, et al.
Nanotechnology. 2021 Feb 19;32(8):085705. doi: 10.1088/1361-6528/abc91a.
Nanotechnology. 2021.
PMID: 33171444
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Correlated optical and structural analyses of individual GaAsP/GaP core-shell nanowires.
Himwas C, Collin S, Chen HL, Patriarche G, Oehler F, Travers L, Saket O, Julien FH, Harmand JC, Tchernycheva M.
Himwas C, et al. Among authors: saket o.
Nanotechnology. 2019 Jul 26;30(30):304001. doi: 10.1088/1361-6528/ab1760. Epub 2019 Apr 9.
Nanotechnology. 2019.
PMID: 30965307
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