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Black phosphorus field-effect transistors.
Li L, Yu Y, Ye GJ, Ge Q, Ou X, Wu H, Feng D, Chen XH, Zhang Y. Li L, et al. Among authors: zhang y. Nat Nanotechnol. 2014 May;9(5):372-7. doi: 10.1038/nnano.2014.35. Epub 2014 Mar 2. Nat Nanotechnol. 2014. PMID: 24584274
Gate-tunable phase transitions in thin flakes of 1T-TaS2.
Yu Y, Yang F, Lu XF, Yan YJ, Cho YH, Ma L, Niu X, Kim S, Son YW, Feng D, Li S, Cheong SW, Chen XH, Zhang Y. Yu Y, et al. Among authors: zhang y. Nat Nanotechnol. 2015 Mar;10(3):270-6. doi: 10.1038/nnano.2014.323. Epub 2015 Jan 26. Nat Nanotechnol. 2015. PMID: 25622230
Quantum Hall effect in black phosphorus two-dimensional electron system.
Li L, Yang F, Ye GJ, Zhang Z, Zhu Z, Lou W, Zhou X, Li L, Watanabe K, Taniguchi T, Chang K, Wang Y, Chen XH, Zhang Y. Li L, et al. Among authors: zhang z, zhang y. Nat Nanotechnol. 2016 Jul;11(7):593-7. doi: 10.1038/nnano.2016.42. Epub 2016 Mar 28. Nat Nanotechnol. 2016. PMID: 27018659
Direct observation of the layer-dependent electronic structure in phosphorene.
Li L, Kim J, Jin C, Ye GJ, Qiu DY, da Jornada FH, Shi Z, Chen L, Zhang Z, Yang F, Watanabe K, Taniguchi T, Ren W, Louie SG, Chen XH, Zhang Y, Wang F. Li L, et al. Among authors: zhang z, zhang y. Nat Nanotechnol. 2017 Jan;12(1):21-25. doi: 10.1038/nnano.2016.171. Epub 2016 Sep 19. Nat Nanotechnol. 2017. PMID: 27643457
Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2.
Deng Y, Yu Y, Song Y, Zhang J, Wang NZ, Sun Z, Yi Y, Wu YZ, Wu S, Zhu J, Wang J, Chen XH, Zhang Y. Deng Y, et al. Among authors: zhang j, zhang y. Nature. 2018 Nov;563(7729):94-99. doi: 10.1038/s41586-018-0626-9. Epub 2018 Oct 22. Nature. 2018. PMID: 30349002
240,786 results
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