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Single-crystalline boron-doped diamond superconducting quantum interference devices with regrowth-induced step edge structure.
Sci Rep. 2019 Oct 23;9(1):15214. doi: 10.1038/s41598-019-51596-w.
Sci Rep. 2019.
PMID: 31645621
Free PMC article.
Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors.
Oi N, Inaba M, Okubo S, Tsuyuzaki I, Kageura T, Onoda S, Hiraiwa A, Kawarada H.
Oi N, et al. Among authors: tsuyuzaki i.
Sci Rep. 2018 Jul 13;8(1):10660. doi: 10.1038/s41598-018-28837-5.
Sci Rep. 2018.
PMID: 30006560
Free PMC article.
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