Huyghebaert C - Search Results

1

Graphene and two-dimensional materials for silicon technology.

Akinwande D, Huyghebaert C, Wang CH, Serna MI, Goossens S, Li LJ, Wong HP, Koppens FHL. Akinwande D, et al. Among authors: huyghebaert c. Nature. 2019 Sep;573(7775):507-518. doi: 10.1038/s41586-019-1573-9. Epub 2019 Sep 25. Nature. 2019. PMID: 31554977 Review.

2

Yield, variability, reliability, and stability of two-dimensional materials based solid-state electronic devices.

Lanza M, Smets Q, Huyghebaert C, Li LJ. Lanza M, et al. Among authors: huyghebaert c. Nat Commun. 2020 Nov 10;11(1):5689. doi: 10.1038/s41467-020-19053-9. Nat Commun. 2020. PMID: 33173041 Free PMC article.

3

2D materials for future heterogeneous electronics.

Lemme MC, Akinwande D, Huyghebaert C, Stampfer C. Lemme MC, et al. Among authors: huyghebaert c. Nat Commun. 2022 Mar 16;13(1):1392. doi: 10.1038/s41467-022-29001-4. Nat Commun. 2022. PMID: 35296657 Free PMC article.

4

Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance Nanoelectronics.

Shi Y, Groven B, Serron J, Wu X, Nalin Mehta A, Minj A, Sergeant S, Han H, Asselberghs I, Lin D, Brems S, Huyghebaert C, Morin P, Radu I, Caymax M. Shi Y, et al. Among authors: huyghebaert c. ACS Nano. 2021 Jun 22;15(6):9482-9494. doi: 10.1021/acsnano.0c07761. Epub 2021 May 27. ACS Nano. 2021. PMID: 34042437

5

Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides.

Nourbakhsh A, Adelmann C, Song Y, Lee CS, Asselberghs I, Huyghebaert C, Brizzi S, Tallarida M, Schmeisser D, Van Elshocht S, Heyns M, Kong J, Palacios T, De Gendt S. Nourbakhsh A, et al. Among authors: huyghebaert c. Nanoscale. 2015 Jun 28;7(24):10781-9. doi: 10.1039/c5nr01128k. Epub 2015 Jun 3. Nanoscale. 2015. PMID: 26036353 Free article.

6

Chemically enhanced double-gate bilayer graphene field-effect transistor with neutral channel for logic applications.

Nourbakhsh A, Agarwal TK, Klekachev A, Asselberghs I, Cantoro M, Huyghebaert C, Heyns M, Verhelst M, Thean A, De Gendt S. Nourbakhsh A, et al. Among authors: huyghebaert c. Nanotechnology. 2014 Aug 29;25(34):345203. doi: 10.1088/0957-4484/25/34/345203. Epub 2014 Aug 7. Nanotechnology. 2014. PMID: 25101635

7

Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity.

Chiappe D, Ludwig J, Leonhardt A, El Kazzi S, Nalin Mehta A, Nuytten T, Celano U, Sutar S, Pourtois G, Caymax M, Paredis K, Vandervorst W, Lin D, De Gendt S, Barla K, Huyghebaert C, Asselberghs I, Radu I. Chiappe D, et al. Among authors: huyghebaert c. Nanotechnology. 2018 Oct 19;29(42):425602. doi: 10.1088/1361-6528/aad798. Epub 2018 Aug 2. Nanotechnology. 2018. PMID: 30070657

8

Importance of the substrate's surface evolution during the MOVPE growth of 2D-transition metal dichalcogenides.

Mo J, El Kazzi S, Mortelmans W, Mehta AN, Sergeant S, Smets Q, Asselberghs I, Huyghebaert C. Mo J, et al. Among authors: huyghebaert c. Nanotechnology. 2020 Mar 20;31(12):125604. doi: 10.1088/1361-6528/ab5ffd. Epub 2019 Dec 9. Nanotechnology. 2020. PMID: 31816615

9

High Cycling Stability and Extreme Rate Performance in Nanoscaled LiMn2O4 Thin Films.

Put B, Vereecken PM, Labyedh N, Sepulveda A, Huyghebaert C, Radu IP, Stesmans A. Put B, et al. Among authors: huyghebaert c. ACS Appl Mater Interfaces. 2015 Oct 14;7(40):22413-20. doi: 10.1021/acsami.5b06386. Epub 2015 Oct 5. ACS Appl Mater Interfaces. 2015. PMID: 26436688

10

Impact of MoS₂ layer transfer on electrostatics of MoS₂/SiO₂ interface.

Afanas'ev VV, Chiappe D, Perucchini M, Houssa M, Huyghebaert C, Radu I, Stesmans A. Afanas'ev VV, et al. Among authors: huyghebaert c. Nanotechnology. 2019 Feb 1;30(5):055702. doi: 10.1088/1361-6528/aaf03f. Epub 2018 Dec 4. Nanotechnology. 2019. PMID: 30511667

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