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High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide.
Nagy R, Niethammer M, Widmann M, Chen YC, Udvarhelyi P, Bonato C, Hassan JU, Karhu R, Ivanov IG, Son NT, Maze JR, Ohshima T, Soykal ÖO, Gali Á, Lee SY, Kaiser F, Wrachtrup J. Nagy R, et al. Among authors: maze jr. Nat Commun. 2019 Apr 26;10(1):1954. doi: 10.1038/s41467-019-09873-9. Nat Commun. 2019. PMID: 31028260 Free PMC article.
Electronic structure of the silicon vacancy color center in diamond.
Hepp C, Müller T, Waselowski V, Becker JN, Pingault B, Sternschulte H, Steinmüller-Nethl D, Gali A, Maze JR, Atatüre M, Becher C. Hepp C, et al. Among authors: maze jr. Phys Rev Lett. 2014 Jan 24;112(3):036405. doi: 10.1103/PhysRevLett.112.036405. Epub 2014 Jan 24. Phys Rev Lett. 2014. PMID: 24484153 Free article.
Low-Temperature Photophysics of Single Nitrogen-Vacancy Centers in Diamond.
Happacher J, Broadway DA, Bocquel J, Reiser P, Jimenéz A, Tschudin MA, Thiel L, Rohner D, Puigibert MLG, Shields B, Maze JR, Jacques V, Maletinsky P. Happacher J, et al. Among authors: maze jr. Phys Rev Lett. 2022 Apr 29;128(17):177401. doi: 10.1103/PhysRevLett.128.177401. Phys Rev Lett. 2022. PMID: 35570423
28 results