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Ligand hyperfine interactions at silicon vacancies in 4H-SiC.
Son NT, Stenberg P, Jokubavicius V, Ohshima T, Ul Hassan J, Ivanov IG. Son NT, et al. J Phys Condens Matter. 2019 May 15;31(19):195501. doi: 10.1088/1361-648X/ab072b. Epub 2019 Feb 14. J Phys Condens Matter. 2019. PMID: 30763923 Free article.
Silicon antisite in 4H SiC.
Son NT, Hai PN, Janzén E. Son NT, et al. Phys Rev Lett. 2001 Jul 23;87(4):045502. doi: 10.1103/PhysRevLett.87.045502. Epub 2001 Jul 5. Phys Rev Lett. 2001. PMID: 11461628
Divacancy in 4H-SiC.
Son NT, Carlsson P, ul Hassan J, Janzén E, Umeda T, Isoya J, Gali A, Bockstedte M, Morishita N, Ohshima T, Itoh H. Son NT, et al. Phys Rev Lett. 2006 Feb 10;96(5):055501. doi: 10.1103/PhysRevLett.96.055501. Epub 2006 Feb 6. Phys Rev Lett. 2006. PMID: 16486945
Identification of the carbon antisite-vacancy pair in 4H-SiC.
Umeda T, Son NT, Isoya J, Janzén E, Ohshima T, Morishita N, Itoh H, Gali A, Bockstedte M. Umeda T, et al. Among authors: son nt. Phys Rev Lett. 2006 Apr 14;96(14):145501. doi: 10.1103/PhysRevLett.96.145501. Epub 2006 Apr 10. Phys Rev Lett. 2006. PMID: 16712089 Free article.
Negative-U system of carbon vacancy in 4H-SiC.
Son NT, Trinh XT, Løvlie LS, Svensson BG, Kawahara K, Suda J, Kimoto T, Umeda T, Isoya J, Makino T, Ohshima T, Janzén E. Son NT, et al. Phys Rev Lett. 2012 Nov 2;109(18):187603. doi: 10.1103/PhysRevLett.109.187603. Epub 2012 Oct 31. Phys Rev Lett. 2012. PMID: 23215331 Free article.
Coherent control of single spins in silicon carbide at room temperature.
Widmann M, Lee SY, Rendler T, Son NT, Fedder H, Paik S, Yang LP, Zhao N, Yang S, Booker I, Denisenko A, Jamali M, Momenzadeh SA, Gerhardt I, Ohshima T, Gali A, Janzén E, Wrachtrup J. Widmann M, et al. Among authors: son nt. Nat Mater. 2015 Feb;14(2):164-8. doi: 10.1038/nmat4145. Epub 2014 Dec 1. Nat Mater. 2015. PMID: 25437256
Scalable Quantum Photonics with Single Color Centers in Silicon Carbide.
Radulaski M, Widmann M, Niethammer M, Zhang JL, Lee SY, Rendler T, Lagoudakis KG, Son NT, Janzén E, Ohshima T, Wrachtrup J, Vučković J. Radulaski M, et al. Among authors: son nt. Nano Lett. 2017 Mar 8;17(3):1782-1786. doi: 10.1021/acs.nanolett.6b05102. Epub 2017 Feb 24. Nano Lett. 2017. PMID: 28225630 Free article.
High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide.
Nagy R, Niethammer M, Widmann M, Chen YC, Udvarhelyi P, Bonato C, Hassan JU, Karhu R, Ivanov IG, Son NT, Maze JR, Ohshima T, Soykal ÖO, Gali Á, Lee SY, Kaiser F, Wrachtrup J. Nagy R, et al. Among authors: son nt. Nat Commun. 2019 Apr 26;10(1):1954. doi: 10.1038/s41467-019-09873-9. Nat Commun. 2019. PMID: 31028260 Free PMC article.
124 results