Rauschenbach B - Search Results

1

Ultrafast interfacial transformation from 2D- to 3D-bonded structures in layered Ge-Sb-Te thin films and heterostructures.

Behrens M , Lotnyk A , Gerlach JW , Hilmi I , Abel T , Lorenz P , Rauschenbach B . Behrens M , et al. Among authors: rauschenbach b. Nanoscale. 2018 Dec 13;10(48):22946-22953. doi: 10.1039/c8nr06567e. Nanoscale. 2018. PMID: 30500030

2

In situ observations of the reversible vacancy ordering process in van der Waals-bonded Ge-Sb-Te thin films and GeTe-Sb₂Te₃ superlattices.

Lotnyk A , Dankwort T , Hilmi I , Kienle L , Rauschenbach B . Lotnyk A , et al. Among authors: rauschenbach b. Nanoscale. 2019 Jun 6;11(22):10838-10845. doi: 10.1039/c9nr02112d. Nanoscale. 2019. PMID: 31135011

3

Phase change thin films for non-volatile memory applications.

Lotnyk A, Behrens M, Rauschenbach B. Lotnyk A, et al. Among authors: rauschenbach b. Nanoscale Adv. 2019 Sep 18;1(10):3836-3857. doi: 10.1039/c9na00366e. eCollection 2019 Oct 9. Nanoscale Adv. 2019. PMID: 36132100 Free PMC article. Review.

4

An aberration-corrected STEM study of structural defects in epitaxial GaN thin films grown by ion beam assisted MBE.

Poppitz D, Lotnyk A, Gerlach JW, Lenzner J, Grundmann M, Rauschenbach B. Poppitz D, et al. Among authors: rauschenbach b. Micron. 2015 Jun;73:1-8. doi: 10.1016/j.micron.2015.03.006. Epub 2015 Mar 23. Micron. 2015. PMID: 25846303

5

Local atomic arrangements and lattice distortions in layered Ge-Sb-Te crystal structures.

Lotnyk A, Ross U, Bernütz S, Thelander E, Rauschenbach B. Lotnyk A, et al. Among authors: rauschenbach b. Sci Rep. 2016 May 25;6:26724. doi: 10.1038/srep26724. Sci Rep. 2016. PMID: 27220411 Free PMC article.

6

Crystallization of Ge2Sb2Te5 thin films by nano- and femtosecond single laser pulse irradiation.

Sun X, Ehrhardt M, Lotnyk A, Lorenz P, Thelander E, Gerlach JW, Smausz T, Decker U, Rauschenbach B. Sun X, et al. Among authors: rauschenbach b. Sci Rep. 2016 Jun 13;6:28246. doi: 10.1038/srep28246. Sci Rep. 2016. PMID: 27292819 Free PMC article.

7

Ion Beam Assisted Deposition of Thin Epitaxial GaN Films.

Rauschenbach B, Lotnyk A, Neumann L, Poppitz D, Gerlach JW. Rauschenbach B, et al. Materials (Basel). 2017 Jun 23;10(7):690. doi: 10.3390/ma10070690. Materials (Basel). 2017. PMID: 28773052 Free PMC article.

8

Direct Measurement of Crystal Growth Velocity in Epitaxial Phase-Change Material Thin Films.

Behrens M, Lotnyk A, Gerlach JW, Ehrhardt M, Lorenz P, Rauschenbach B. Behrens M, et al. Among authors: rauschenbach b. ACS Appl Mater Interfaces. 2019 Nov 6;11(44):41544-41550. doi: 10.1021/acsami.9b16111. Epub 2019 Oct 25. ACS Appl Mater Interfaces. 2019. PMID: 31612702

9

Structural Transitions in Ge₂Sb₂Te₅ Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses.

Behrens M, Lotnyk A, Bryja H, Gerlach JW, Rauschenbach B. Behrens M, et al. Among authors: rauschenbach b. Materials (Basel). 2020 May 1;13(9):2082. doi: 10.3390/ma13092082. Materials (Basel). 2020. PMID: 32369916 Free PMC article.

10

Comparative study of sculptured metallic thin films deposited by oblique angle deposition at different temperatures.

Liedtke S, Grüner C, Gerlach JW, Rauschenbach B. Liedtke S, et al. Among authors: rauschenbach b. Beilstein J Nanotechnol. 2018 Mar 22;9:954-962. doi: 10.3762/bjnano.9.89. eCollection 2018. Beilstein J Nanotechnol. 2018. PMID: 29600156 Free PMC article.

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