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Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 22.3.
Opt Lett. 2018 Oct 1;43(19):4558-4561. doi: 10.1364/OL.43.004558.
Opt Lett. 2018.
PMID: 30272682
Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics.
Ghetmiri SA, Zhou Y, Margetis J, Al-Kabi S, Dou W, Mosleh A, Du W, Kuchuk A, Liu J, Sun G, Soref RA, Tolle J, Naseem HA, Li B, Mortazavi M, Yu SQ.
Ghetmiri SA, et al.
Opt Lett. 2017 Feb 1;42(3):387-390. doi: 10.1364/OL.42.000387.
Opt Lett. 2017.
PMID: 28146483
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Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection.
Conley BR, Mosleh A, Ghetmiri SA, Du W, Soref RA, Sun G, Margetis J, Tolle J, Naseem HA, Yu SQ.
Conley BR, et al. Among authors: ghetmiri sa.
Opt Express. 2014 Jun 30;22(13):15639-52. doi: 10.1364/OE.22.015639.
Opt Express. 2014.
PMID: 24977823
Free article.
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Ge1-xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration.
Eales TD, Marko IP, Schulz S, O'Halloran E, Ghetmiri S, Du W, Zhou Y, Yu SQ, Margetis J, Tolle J, O'Reilly EP, Sweeney SJ.
Eales TD, et al.
Sci Rep. 2019 Oct 1;9(1):14077. doi: 10.1038/s41598-019-50349-z.
Sci Rep. 2019.
PMID: 31575881
Free PMC article.
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