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Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors.
Sci Rep. 2018 Jul 13;8(1):10660. doi: 10.1038/s41598-018-28837-5.
Sci Rep. 2018.
PMID: 30006560
Free PMC article.
Single-crystalline boron-doped diamond superconducting quantum interference devices with regrowth-induced step edge structure.
Kageura T, Hideko M, Tsuyuzaki I, Morishita A, Kawano A, Sasama Y, Yamaguchi T, Takano Y, Tachiki M, Ooi S, Hirata K, Arisawa S, Kawarada H.
Kageura T, et al. Among authors: tsuyuzaki i.
Sci Rep. 2019 Oct 23;9(1):15214. doi: 10.1038/s41598-019-51596-w.
Sci Rep. 2019.
PMID: 31645621
Free PMC article.
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