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Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance.
Nanotechnology. 2018 Mar 2;29(9):095202. doi: 10.1088/1361-6528/aaa590.
Nanotechnology. 2018.
PMID: 29373324
A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor.
Vitale WA, Casu EA, Biswas A, Rosca T, Alper C, Krammer A, Luong GV, Zhao QT, Mantl S, Schüler A, Ionescu AM.
Vitale WA, et al. Among authors: luong gv.
Sci Rep. 2017 Mar 23;7(1):355. doi: 10.1038/s41598-017-00359-6.
Sci Rep. 2017.
PMID: 28336970
Free PMC article.
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