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Local strain engineering in atomically thin MoS2.
Castellanos-Gomez A, Roldán R, Cappelluti E, Buscema M, Guinea F, van der Zant HS, Steele GA. Castellanos-Gomez A, et al. Among authors: cappelluti e. Nano Lett. 2013;13(11):5361-6. doi: 10.1021/nl402875m. Epub 2013 Oct 3. Nano Lett. 2013. PMID: 24083520
Strain engineering in semiconducting two-dimensional crystals.
Roldán R, Castellanos-Gomez A, Cappelluti E, Guinea F. Roldán R, et al. Among authors: cappelluti e. J Phys Condens Matter. 2015 Aug 12;27(31):313201. doi: 10.1088/0953-8984/27/31/313201. Epub 2015 Jul 22. J Phys Condens Matter. 2015. PMID: 26199038
Dielectric screening in atomically thin boron nitride nanosheets.
Li LH, Santos EJ, Xing T, Cappelluti E, Roldán R, Chen Y, Watanabe K, Taniguchi T. Li LH, et al. Among authors: cappelluti e. Nano Lett. 2015 Jan 14;15(1):218-23. doi: 10.1021/nl503411a. Epub 2014 Dec 5. Nano Lett. 2015. PMID: 25457561
High T(c) superconductivity in MgB2 by nonadiabatic pairing.
Cappelluti E, Ciuchi S, Grimaldi C, Pietronero L, Strässler S. Cappelluti E, et al. Phys Rev Lett. 2002 Mar 18;88(11):117003. doi: 10.1103/PhysRevLett.88.117003. Epub 2002 Mar 4. Phys Rev Lett. 2002. PMID: 11909423
29 results