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Charge Transport and the Nature of Traps in Oxygen Deficient Tantalum Oxide.
ACS Appl Mater Interfaces. 2018 Jan 31;10(4):3769-3775. doi: 10.1021/acsami.7b16753. Epub 2018 Jan 22.
ACS Appl Mater Interfaces. 2018.
PMID: 29308879
Electronic structure and charge transport in nonstoichiometric tantalum oxide.
Perevalov TV, Gritsenko VA, Gismatulin AA, Voronkovskii VA, Gerasimova AK, Aliev VS, Prosvirin IA.
Perevalov TV, et al. Among authors: voronkovskii va.
Nanotechnology. 2018 Jun 29;29(26):264001. doi: 10.1088/1361-6528/aaba4c. Epub 2018 Mar 28.
Nanotechnology. 2018.
PMID: 29589838
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Influence of the active TaN/ZrO x /Ni memristor layer oxygen content on forming and resistive switching behavior.
Voronkovskii VA, Aliev VS, Gerasimova AK, Perevalov TV, Prosvirin IP, Islamov DR.
Voronkovskii VA, et al.
Nanotechnology. 2021 Feb 23;32(18):185205. doi: 10.1088/1361-6528/abce7b. Online ahead of print.
Nanotechnology. 2021.
PMID: 33620032
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Electronic structure and charge transport mechanism in a forming-free SiO x -based memristor.
Gismatulin AA, Voronkovskii VA, Kamaev GN, Novikov YN, Kruchinin VN, Krivyakin GK, Gritsenko VA, Prosvirin IP, Chin A.
Gismatulin AA, et al. Among authors: voronkovskii va.
Nanotechnology. 2020 Dec 11;31(50):505704. doi: 10.1088/1361-6528/abb505.
Nanotechnology. 2020.
PMID: 33021224
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