Rahman R - Search Results

1

Atomically engineered electron spin lifetimes of 30 s in silicon.

Watson TF, Weber B, Hsueh YL, Hollenberg LLC, Rahman R, Simmons MY. Watson TF, et al. Among authors: rahman r. Sci Adv. 2017 Mar 31;3(3):e1602811. doi: 10.1126/sciadv.1602811. eCollection 2017 Mar. Sci Adv. 2017. PMID: 29159289 Free PMC article.

2

Spin readout and addressability of phosphorus-donor clusters in silicon.

Büch H, Mahapatra S, Rahman R, Morello A, Simmons MY. Büch H, et al. Among authors: rahman r. Nat Commun. 2013;4:2017. doi: 10.1038/ncomms3017. Nat Commun. 2013. PMID: 23774081 Free article.

3

Spatially resolving valley quantum interference of a donor in silicon.

Salfi J, Mol JA, Rahman R, Klimeck G, Simmons MY, Hollenberg LC, Rogge S. Salfi J, et al. Among authors: rahman r. Nat Mater. 2014 Jun;13(6):605-10. doi: 10.1038/nmat3941. Epub 2014 Apr 6. Nat Mater. 2014. PMID: 24705384

4

Spin blockade and exchange in Coulomb-confined silicon double quantum dots.

Weber B, Tan YH, Mahapatra S, Watson TF, Ryu H, Rahman R, Hollenberg LC, Klimeck G, Simmons MY. Weber B, et al. Among authors: rahman r. Nat Nanotechnol. 2014 Jun;9(6):430-5. doi: 10.1038/nnano.2014.63. Epub 2014 Apr 13. Nat Nanotechnol. 2014. PMID: 24727686

5

Spin-lattice relaxation times of single donors and donor clusters in silicon.

Hsueh YL, Büch H, Tan Y, Wang Y, Hollenberg LC, Klimeck G, Simmons MY, Rahman R. Hsueh YL, et al. Among authors: rahman r. Phys Rev Lett. 2014 Dec 12;113(24):246406. doi: 10.1103/PhysRevLett.113.246406. Epub 2014 Dec 11. Phys Rev Lett. 2014. PMID: 25541787

6

Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory.

Usman M, Rahman R, Salfi J, Bocquel J, Voisin B, Rogge S, Klimeck G, Hollenberg LL. Usman M, et al. Among authors: rahman r. J Phys Condens Matter. 2015 Apr 22;27(15):154207. doi: 10.1088/0953-8984/27/15/154207. Epub 2015 Mar 18. J Phys Condens Matter. 2015. PMID: 25783758

7

Electrically controlling single-spin qubits in a continuous microwave field.

Laucht A, Muhonen JT, Mohiyaddin FA, Kalra R, Dehollain JP, Freer S, Hudson FE, Veldhorst M, Rahman R, Klimeck G, Itoh KM, Jamieson DN, McCallum JC, Dzurak AS, Morello A. Laucht A, et al. Among authors: rahman r. Sci Adv. 2015 Apr 10;1(3):e1500022. doi: 10.1126/sciadv.1500022. eCollection 2015 Apr. Sci Adv. 2015. PMID: 26601166 Free PMC article.

8

Quantum simulation of the Hubbard model with dopant atoms in silicon.

Salfi J, Mol JA, Rahman R, Klimeck G, Simmons MY, Hollenberg LC, Rogge S. Salfi J, et al. Among authors: rahman r. Nat Commun. 2016 Apr 20;7:11342. doi: 10.1038/ncomms11342. Nat Commun. 2016. PMID: 27094205 Free PMC article.

9

Spatial metrology of dopants in silicon with exact lattice site precision.

Usman M, Bocquel J, Salfi J, Voisin B, Tankasala A, Rahman R, Simmons MY, Rogge S, Hollenberg LC. Usman M, et al. Among authors: rahman r. Nat Nanotechnol. 2016 Sep;11(9):763-8. doi: 10.1038/nnano.2016.83. Epub 2016 Jun 6. Nat Nanotechnol. 2016. PMID: 27271965

10

Characterizing Si:P quantum dot qubits with spin resonance techniques.

Wang Y, Chen CY, Klimeck G, Simmons MY, Rahman R. Wang Y, et al. Among authors: rahman r. Sci Rep. 2016 Aug 23;6:31830. doi: 10.1038/srep31830. Sci Rep. 2016. PMID: 27550779 Free PMC article.

Save citations to file

Email citations

Send citations to clipboard

Add to Collections

Add to My Bibliography

Create a file for external citation management software

Your saved search

Your RSS Feed

My NCBI Filters

Text availability

Article attribute

Article type

Publication date

1,304 results

Search Page