Optoelectronic Properties of Few-Layer MoS2 FET Gated by Ferroelectric Relaxor Polymer.
Chen Y, Wang X, Wang P, Huang H, Wu G, Tian B, Hong Z, Wang Y, Sun S, Shen H, Wang J, Hu W, Sun J, Meng X, Chu J.
Chen Y, et al.
ACS Appl Mater Interfaces. 2016 Nov 30;8(47):32083-32088. doi: 10.1021/acsami.6b10206. Epub 2016 Nov 15.
ACS Appl Mater Interfaces. 2016.
PMID: 27801569