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High performance top-gated multilayer WSe2 field effect transistors.
Pudasaini PR, Stanford MG, Oyedele A, Wong AT, Hoffman AN, Briggs DP, Xiao K, Mandrus DG, Ward TZ, Rack PD. Pudasaini PR, et al. Among authors: stanford mg. Nanotechnology. 2017 Nov 24;28(47):475202. doi: 10.1088/1361-6528/aa8081. Nanotechnology. 2017. PMID: 28718775
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