Qian H - Search Results

1

Deep-submicron Graphene Field-Effect Transistors with State-of-Art f_max.

Lyu H, Lu Q, Liu J, Wu X, Zhang J, Li J, Niu J, Yu Z, Wu H, Qian H. Lyu H, et al. Among authors: qian h. Sci Rep. 2016 Oct 24;6:35717. doi: 10.1038/srep35717. Sci Rep. 2016. PMID: 27775009 Free PMC article.

2

A physics/circuit-based switching model for carbon-based resistive memory with sp2/sp3 cluster conversion.

Qin S, Zhang J, Fu D, Xie D, Wang Y, Qian H, Liu L, Yu Z. Qin S, et al. Among authors: qian h. Nanoscale. 2012 Oct 21;4(20):6658-63. doi: 10.1039/c2nr31180a. Nanoscale. 2012. PMID: 22990172

3

Influence of edge imperfections on the transport behavior of graphene nanomeshes.

Ji X, Zhang J, Wang Y, Qian H, Yu Z. Ji X, et al. Among authors: qian h. Nanoscale. 2013 Mar 21;5(6):2527-31. doi: 10.1039/c3nr33241a. Nanoscale. 2013. PMID: 23426177

4

The study of the effects of cooling conditions on high quality graphene growth by the APCVD method.

Xiao K, Wu H, Lv H, Wu X, Qian H. Xiao K, et al. Among authors: qian h. Nanoscale. 2013 Jun 21;5(12):5524-9. doi: 10.1039/c3nr00524k. Nanoscale. 2013. PMID: 23674269

5

A theoretical model for metal-graphene contact resistance using a DFT-NEGF method.

Ji X, Zhang J, Wang Y, Qian H, Yu Z. Ji X, et al. Among authors: qian h. Phys Chem Chem Phys. 2013 Nov 7;15(41):17883-6. doi: 10.1039/c3cp52589a. Phys Chem Chem Phys. 2013. PMID: 24056796

6

Inverted process for graphene integrated circuits fabrication.

Lv H, Wu H, Liu J, Huang C, Li J, Yu J, Niu J, Xu Q, Yu Z, Qian H. Lv H, et al. Among authors: qian h. Nanoscale. 2014 Jun 7;6(11):5826-30. doi: 10.1039/c3nr06904d. Epub 2014 Apr 17. Nanoscale. 2014. PMID: 24745037

7

Study of multi-level characteristics for 3D vertical resistive switching memory.

Bai Y, Wu H, Wu R, Zhang Y, Deng N, Yu Z, Qian H. Bai Y, et al. Among authors: qian h. Sci Rep. 2014 Jul 22;4:5780. doi: 10.1038/srep05780. Sci Rep. 2014. PMID: 25047906 Free PMC article.

8

Stable self-compliance resistive switching in AlOδ/Ta2O(5-x)/TaOy triple layer devices.

Wu H, Li X, Huang F, Chen A, Yu Z, Qian H. Wu H, et al. Among authors: qian h. Nanotechnology. 2015 Jan 21;26(3):035203. doi: 10.1088/0957-4484/26/3/035203. Epub 2014 Dec 30. Nanotechnology. 2015. PMID: 25549017

9

Atomistic study of dynamics for metallic filament growth in conductive-bridge random access memory.

Qin S, Liu Z, Zhang G, Zhang J, Sun Y, Wu H, Qian H, Yu Z. Qin S, et al. Among authors: qian h. Phys Chem Chem Phys. 2015 Apr 14;17(14):8627-32. doi: 10.1039/c4cp04903a. Epub 2015 Mar 9. Phys Chem Chem Phys. 2015. PMID: 25750983

10

Stacked 3D RRAM Array with Graphene/CNT as Edge Electrodes.

Bai Y, Wu H, Wang K, Wu R, Song L, Li T, Wang J, Yu Z, Qian H. Bai Y, et al. Among authors: qian h. Sci Rep. 2015 Sep 8;5:13785. doi: 10.1038/srep13785. Sci Rep. 2015. PMID: 26348797 Free PMC article.

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