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Page 1
Thermally Assisted Nonvolatile Memory in Monolayer MoS2 Transistors.
He G, Ramamoorthy H, Kwan CP, Lee YH, Nathawat J, Somphonsane R, Matsunaga M, Higuchi A, Yamanaka T, Aoki N, Gong Y, Zhang X, Vajtai R, Ajayan PM, Bird JP. He G, et al. Among authors: nathawat j. Nano Lett. 2016 Oct 12;16(10):6445-6451. doi: 10.1021/acs.nanolett.6b02905. Epub 2016 Sep 28. Nano Lett. 2016. PMID: 27680095
Transient Response of h-BN-Encapsulated Graphene Transistors: Signatures of Self-Heating and Hot-Carrier Trapping.
Nathawat J, Zhao M, Kwan CP, Yin S, Arabchigavkani N, Randle M, Ramamoorthy H, He G, Somphonsane R, Matsumoto N, Sakanashi K, Kida M, Aoki N, Jin Z, Kim Y, Kim GH, Watanabe K, Taniguchi T, Bird JP. Nathawat J, et al. ACS Omega. 2019 Feb 22;4(2):4082-4090. doi: 10.1021/acsomega.8b03259. eCollection 2019 Feb 28. ACS Omega. 2019. PMID: 31459617 Free PMC article.
Negative Differential Conductance & Hot-Carrier Avalanching in Monolayer WS2 FETs.
He G, Nathawat J, Kwan CP, Ramamoorthy H, Somphonsane R, Zhao M, Ghosh K, Singisetti U, Perea-López N, Zhou C, Elías AL, Terrones M, Gong Y, Zhang X, Vajtai R, Ajayan PM, Ferry DK, Bird JP. He G, et al. Among authors: nathawat j. Sci Rep. 2017 Sep 12;7(1):11256. doi: 10.1038/s41598-017-11647-6. Sci Rep. 2017. PMID: 28900169 Free PMC article.
Remote Mesoscopic Signatures of Induced Magnetic Texture in Graphene.
Arabchigavkani N, Somphonsane R, Ramamoorthy H, He G, Nathawat J, Yin S, Barut B, He K, Randle MD, Dixit R, Sakanashi K, Aoki N, Zhang K, Wang L, Mei WN, Dowben PA, Fransson J, Bird JP. Arabchigavkani N, et al. Among authors: nathawat j. Phys Rev Lett. 2021 Feb 26;126(8):086802. doi: 10.1103/PhysRevLett.126.086802. Phys Rev Lett. 2021. PMID: 33709762
Asymmetrically Engineered Nanoscale Transistors for On-Demand Sourcing of Terahertz Plasmons.
Barut B, Cantos-Roman X, Crabb J, Kwan CP, Dixit R, Arabchigavkani N, Yin S, Nathawat J, He K, Randle MD, Vandrevala F, Sugaya T, Einarsson E, Jornet JM, Bird JP, Aizin GR. Barut B, et al. Among authors: nathawat j. Nano Lett. 2022 Apr 13;22(7):2674-2681. doi: 10.1021/acs.nanolett.1c04515. Epub 2022 Mar 21. Nano Lett. 2022. PMID: 35312324
Gate-Controlled Metal-Insulator Transition in TiS3 Nanowire Field-Effect Transistors.
Randle M, Lipatov A, Kumar A, Kwan CP, Nathawat J, Barut B, Yin S, He K, Arabchigavkani N, Dixit R, Komesu T, Avila J, Asensio MC, Dowben PA, Sinitskii A, Singisetti U, Bird JP. Randle M, et al. Among authors: nathawat j. ACS Nano. 2019 Jan 22;13(1):803-811. doi: 10.1021/acsnano.8b08260. Epub 2018 Dec 28. ACS Nano. 2019. PMID: 30586504
Graphene on Chromia: A System for Beyond-Room-Temperature Spintronics.
He K, Barut B, Yin S, Randle MD, Dixit R, Arabchigavkani N, Nathawat J, Mahmood A, Echtenkamp W, Binek C, Dowben PA, Bird JP. He K, et al. Among authors: nathawat j. Adv Mater. 2022 Mar;34(12):e2105023. doi: 10.1002/adma.202105023. Epub 2022 Feb 3. Adv Mater. 2022. PMID: 34986269
Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene.
Nathawat J, Mansaray I, Sakanashi K, Wada N, Randle MD, Yin S, He K, Arabchigavkani N, Dixit R, Barut B, Zhao M, Ramamoorthy H, Somphonsane R, Kim GH, Watanabe K, Taniguchi T, Aoki N, Han JE, Bird JP. Nathawat J, et al. Nat Commun. 2023 Mar 17;14(1):1507. doi: 10.1038/s41467-023-37292-4. Nat Commun. 2023. PMID: 36932096 Free PMC article.