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Toward Versatile Sr2FeMoO6-Based Spintronics by Exploiting Nanoscale Defects.
Saloaro M, Hoffmann M, Adeagbo WA, Granroth S, Deniz H, Palonen H, Huhtinen H, Majumdar S, Laukkanen P, Hergert W, Ernst A, Paturi P. Saloaro M, et al. Among authors: laukkanen p. ACS Appl Mater Interfaces. 2016 Aug 10;8(31):20440-7. doi: 10.1021/acsami.6b04132. Epub 2016 Aug 1. ACS Appl Mater Interfaces. 2016. PMID: 27447197
Oxidation-Induced Changes in the ALD-Al2O3/InAs(100) Interface and Control of the Changes for Device Processing.
Tuominen M, Mäkelä J, Yasir M, Dahl J, Granroth S, Lehtiö JP, Félix R, Laukkanen P, Kuzmin M, Laitinen M, Punkkinen MPJ, Hedman HP, Punkkinen R, Polojärvi V, Lyytikäinen J, Tukiainen A, Guina M, Kokko K. Tuominen M, et al. Among authors: laukkanen p. ACS Appl Mater Interfaces. 2018 Dec 26;10(51):44932-44940. doi: 10.1021/acsami.8b17843. Epub 2018 Dec 14. ACS Appl Mater Interfaces. 2018. PMID: 30508372
Anomalous bismuth-stabilized (2x1) reconstructions on GaAs(100) and InP(100) surfaces.
Laukkanen P, Punkkinen MP, Komsa HP, Ahola-Tuomi M, Kokko K, Kuzmin M, Adell J, Sadowski J, Perälä RE, Ropo M, Rantala TT, Väyrynen IJ, Pessa M, Vitos L, Kollár J, Mirbt S, Johansson B. Laukkanen P, et al. Phys Rev Lett. 2008 Feb 29;100(8):086101. doi: 10.1103/PhysRevLett.100.086101. Epub 2008 Feb 25. Phys Rev Lett. 2008. PMID: 18352637
Oxidation of the GaAs semiconductor at the Al2O3/GaAs junction.
Tuominen M, Yasir M, Lång J, Dahl J, Kuzmin M, Mäkelä J, Punkkinen M, Laukkanen P, Kokko K, Schulte K, Punkkinen R, Korpijärvi VM, Polojärvi V, Guina M. Tuominen M, et al. Among authors: laukkanen p. Phys Chem Chem Phys. 2015 Mar 14;17(10):7060-6. doi: 10.1039/c4cp05972g. Phys Chem Chem Phys. 2015. PMID: 25686555
Crystalline and oxide phases revealed and formed on InSb(111)B.
Mäkelä J, Jahanshah Rad ZS, Lehtiö JP, Kuzmin M, Punkkinen MPJ, Laukkanen P, Kokko K. Mäkelä J, et al. Among authors: laukkanen p. Sci Rep. 2018 Sep 26;8(1):14382. doi: 10.1038/s41598-018-32723-5. Sci Rep. 2018. PMID: 30258079 Free PMC article.
51 results