Largeau L - Search Results

1

Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration.

Cariou R, Chen W, Maurice JL, Yu J, Patriarche G, Mauguin O, Largeau L, Decobert J, Roca I Cabarrocas P. Cariou R, et al. Among authors: largeau l. Sci Rep. 2016 May 11;6:25674. doi: 10.1038/srep25674. Sci Rep. 2016. PMID: 27166163 Free PMC article.

2

Growth of vertical GaAs nanowires on an amorphous substrate via a fiber-textured Si platform.

Cohin Y, Mauguin O, Largeau L, Patriarche G, Glas F, Søndergård E, Harmand JC. Cohin Y, et al. Among authors: largeau l. Nano Lett. 2013 Jun 12;13(6):2743-7. doi: 10.1021/nl400924c. Nano Lett. 2013. PMID: 23668839

3

Wurtzite to zinc blende phase transition in GaAs nanowires induced by epitaxial burying.

Patriarche G, Glas F, Tchernycheva M, Sartel C, Largeau L, Harmand JC, Cirlin GE. Patriarche G, et al. Among authors: largeau l. Nano Lett. 2008 Jun;8(6):1638-43. doi: 10.1021/nl080319y. Epub 2008 May 10. Nano Lett. 2008. PMID: 18471022

4

Self-induced growth of vertical GaN nanowires on silica.

Kumaresan V, Largeau L, Oehler F, Zhang H, Mauguin O, Glas F, Gogneau N, Tchernycheva M, Harmand JC. Kumaresan V, et al. Among authors: largeau l. Nanotechnology. 2016 Apr 1;27(13):135602. doi: 10.1088/0957-4484/27/13/135602. Epub 2016 Feb 19. Nanotechnology. 2016. PMID: 26895252

5

Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III-V photonics platform on silicon using a laboratory X-ray diffraction setup.

Ping Wang Y, Letoublon A, Nguyen Thanh T, Bahri M, Largeau L, Patriarche G, Cornet C, Bertru N, Le Corre A, Durand O. Ping Wang Y, et al. Among authors: largeau l. J Appl Crystallogr. 2015 May 31;48(Pt 3):702-710. doi: 10.1107/S1600576715009954. eCollection 2015 Jun 1. J Appl Crystallogr. 2015. PMID: 26089763 Free PMC article.

6

Determination of the local concentrations of Mn interstitials and antisite defects in GaMnAs.

Glas F, Patriarche G, Largeau L, Lemaître A. Glas F, et al. Among authors: largeau l. Phys Rev Lett. 2004 Aug 20;93(8):086107. doi: 10.1103/PhysRevLett.93.086107. Epub 2004 Aug 19. Phys Rev Lett. 2004. PMID: 15447206

7

Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy.

Pantzas K, Patriarche G, Troadec D, Gautier S, Moudakir T, Suresh S, Largeau L, Mauguin O, Voss PL, Ougazzaden A. Pantzas K, et al. Among authors: largeau l. Nanotechnology. 2012 Nov 16;23(45):455707. doi: 10.1088/0957-4484/23/45/455707. Epub 2012 Oct 22. Nanotechnology. 2012. PMID: 23089619

8

Optical spectroscopy of two-dimensional layered (C(6)H(5)C(2)H(4)-NH(3))(2)-PbI(4) perovskite.

Gauthron K, Lauret JS, Doyennette L, Lanty G, Al Choueiry A, Zhang SJ, Brehier A, Largeau L, Mauguin O, Bloch J, Deleporte E. Gauthron K, et al. Among authors: largeau l. Opt Express. 2010 Mar 15;18(6):5912-9. doi: 10.1364/OE.18.005912. Opt Express. 2010. PMID: 20389609 Free article.

9

Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy.

Galopin E, Largeau L, Patriarche G, Travers L, Glas F, Harmand JC. Galopin E, et al. Among authors: largeau l. Nanotechnology. 2011 Jun 17;22(24):245606. doi: 10.1088/0957-4484/22/24/245606. Epub 2011 Apr 21. Nanotechnology. 2011. PMID: 21508494

10

Ion-shaping of embedded gold hollow nanoshells into vertically aligned prolate morphologies.

Coulon PE, Amici J, Clochard MC, Khomenkov V, Dufour C, Monnet I, Grygiel C, Perruchas S, Ulysse C, Largeau L, Rizza G. Coulon PE, et al. Among authors: largeau l. Sci Rep. 2016 Feb 17;6:21116. doi: 10.1038/srep21116. Sci Rep. 2016. PMID: 26883992 Free PMC article.

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