Fallahazad B - Search Results

1

High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors.

Movva HC, Rai A, Kang S, Kim K, Fallahazad B, Taniguchi T, Watanabe K, Tutuc E, Banerjee SK. Movva HC, et al. Among authors: fallahazad b. ACS Nano. 2015 Oct 27;9(10):10402-10. doi: 10.1021/acsnano.5b04611. Epub 2015 Sep 14. ACS Nano. 2015. PMID: 26343531

2

Gate-tunable resonant tunneling in double bilayer graphene heterostructures.

Fallahazad B, Lee K, Kang S, Xue J, Larentis S, Corbet C, Kim K, Movva HC, Taniguchi T, Watanabe K, Register LF, Banerjee SK, Tutuc E. Fallahazad B, et al. Nano Lett. 2015 Jan 14;15(1):428-33. doi: 10.1021/nl503756y. Epub 2014 Dec 8. Nano Lett. 2015. PMID: 25436861

3

Band Alignment in WSe2-Graphene Heterostructures.

Kim K, Larentis S, Fallahazad B, Lee K, Xue J, Dillen DC, Corbet CM, Tutuc E. Kim K, et al. Among authors: fallahazad b. ACS Nano. 2015 Apr 28;9(4):4527-32. doi: 10.1021/acsnano.5b01114. Epub 2015 Mar 23. ACS Nano. 2015. PMID: 25768037

4

van der Waals Heterostructures with High Accuracy Rotational Alignment.

Kim K, Yankowitz M, Fallahazad B, Kang S, Movva HC, Huang S, Larentis S, Corbet CM, Taniguchi T, Watanabe K, Banerjee SK, LeRoy BJ, Tutuc E. Kim K, et al. Among authors: fallahazad b. Nano Lett. 2016 Mar 9;16(3):1989-95. doi: 10.1021/acs.nanolett.5b05263. Epub 2016 Feb 15. Nano Lett. 2016. PMID: 26859527

5

Reconfigurable Complementary Monolayer MoTe₂ Field-Effect Transistors for Integrated Circuits.

Larentis S, Fallahazad B, Movva HCP, Kim K, Rai A, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Larentis S, et al. Among authors: fallahazad b. ACS Nano. 2017 May 23;11(5):4832-4839. doi: 10.1021/acsnano.7b01306. Epub 2017 Apr 17. ACS Nano. 2017. PMID: 28414214

6

Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe₂ Heterostructures.

Burg GW, Prasad N, Fallahazad B, Valsaraj A, Kim K, Taniguchi T, Watanabe K, Wang Q, Kim MJ, Register LF, Tutuc E. Burg GW, et al. Among authors: fallahazad b. Nano Lett. 2017 Jun 14;17(6):3919-3925. doi: 10.1021/acs.nanolett.7b01505. Epub 2017 Jun 2. Nano Lett. 2017. PMID: 28557462

7

Band offset and negative compressibility in graphene-MoS2 heterostructures.

Larentis S, Tolsma JR, Fallahazad B, Dillen DC, Kim K, MacDonald AH, Tutuc E. Larentis S, et al. Among authors: fallahazad b. Nano Lett. 2014;14(4):2039-45. doi: 10.1021/nl500212s. Epub 2014 Mar 19. Nano Lett. 2014. PMID: 24611616

8

Bilayer graphene. Chemical potential and quantum Hall ferromagnetism in bilayer graphene.

Lee K, Fallahazad B, Xue J, Dillen DC, Kim K, Taniguchi T, Watanabe K, Tutuc E. Lee K, et al. Among authors: fallahazad b. Science. 2014 Jul 4;345(6192):58-61. doi: 10.1126/science.1251003. Science. 2014. PMID: 24994645

9

Shubnikov-de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer WSe_{2}: Landau Level Degeneracy, Effective Mass, and Negative Compressibility.

Fallahazad B, Movva HC, Kim K, Larentis S, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Fallahazad B, et al. Phys Rev Lett. 2016 Feb 26;116(8):086601. doi: 10.1103/PhysRevLett.116.086601. Epub 2016 Feb 23. Phys Rev Lett. 2016. PMID: 26967432

10

Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer WSe_{2}.

Movva HCP, Fallahazad B, Kim K, Larentis S, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Movva HCP, et al. Among authors: fallahazad b. Phys Rev Lett. 2017 Jun 16;118(24):247701. doi: 10.1103/PhysRevLett.118.247701. Epub 2017 Jun 15. Phys Rev Lett. 2017. PMID: 28665633

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