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Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment.
Nano Lett. 2015 Sep 9;15(9):5791-8. doi: 10.1021/acs.nanolett.5b01792. Epub 2015 Aug 4.
Nano Lett. 2015.
PMID: 26226296
Atomic Layer Deposition of Al2O3 on WSe2 Functionalized by Titanyl Phthalocyanine.
Park JH, Fathipour S, Kwak I, Sardashti K, Ahles CF, Wolf SF, Edmonds M, Vishwanath S, Xing HG, Fullerton-Shirey SK, Seabaugh A, Kummel AC.
Park JH, et al. Among authors: fathipour s.
ACS Nano. 2016 Jul 26;10(7):6888-96. doi: 10.1021/acsnano.6b02648. Epub 2016 Jun 29.
ACS Nano. 2016.
PMID: 27305595
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Reconfigurable Ion Gating of 2H-MoTe2 Field-Effect Transistors Using Poly(ethylene oxide)-CsClO4 Solid Polymer Electrolyte.
Xu H, Fathipour S, Kinder EW, Seabaugh AC, Fullerton-Shirey SK.
Xu H, et al. Among authors: fathipour s.
ACS Nano. 2015 May 26;9(5):4900-10. doi: 10.1021/nn506521p. Epub 2015 Apr 22.
ACS Nano. 2015.
PMID: 25877681
Free article.
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Electric-double-layer p-i-n junctions in WSe2.
Fathipour S, Paletti P, Fullerton-Shirey SK, Seabaugh AC.
Fathipour S, et al.
Sci Rep. 2020 Jul 30;10(1):12890. doi: 10.1038/s41598-020-69523-9.
Sci Rep. 2020.
PMID: 32732940
Free PMC article.
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Gate-Controlled WSe2 Transistors Using a Buried Triple-Gate Structure.
Müller MR, Salazar R, Fathipour S, Xu H, Kallis K, Künzelmann U, Seabaugh A, Appenzeller J, Knoch J.
Müller MR, et al. Among authors: fathipour s.
Nanoscale Res Lett. 2016 Dec;11(1):512. doi: 10.1186/s11671-016-1728-7. Epub 2016 Nov 22.
Nanoscale Res Lett. 2016.
PMID: 27878575
Free PMC article.
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Enhanced carrier transport by transition metal doping in WS2 field effect transistors.
Liu M , Wei S , Shahi S , Jaiswal HN , Paletti P , Fathipour S , Remškar M , Jiao J , Hwang W , Yao F , Li H .
Liu M , et al. Among authors: fathipour s.
Nanoscale. 2020 Sep 7;12(33):17253-17264. doi: 10.1039/d0nr01573c. Epub 2020 Apr 24.
Nanoscale. 2020.
PMID: 32329484
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