Akinwande D - Search Results

1

Radio Frequency Transistors and Circuits Based on CVD MoS2.

Sanne A, Ghosh R, Rai A, Yogeesh MN, Shin SH, Sharma A, Jarvis K, Mathew L, Rao R, Akinwande D, Banerjee S. Sanne A, et al. Among authors: akinwande d. Nano Lett. 2015 Aug 12;15(8):5039-45. doi: 10.1021/acs.nanolett.5b01080. Epub 2015 Jul 8. Nano Lett. 2015. PMID: 26134588

2

Best Practices for Using AI When Writing Scientific Manuscripts.

Buriak JM, Akinwande D, Artzi N, Brinker CJ, Burrows C, Chan WCW, Chen C, Chen X, Chhowalla M, Chi L, Chueh W, Crudden CM, Di Carlo D, Glotzer SC, Hersam MC, Ho D, Hu TY, Huang J, Javey A, Kamat PV, Kim ID, Kotov NA, Lee TR, Lee YH, Li Y, Liz-Marzán LM, Mulvaney P, Narang P, Nordlander P, Oklu R, Parak WJ, Rogach AL, Salanne M, Samorì P, Schaak RE, Schanze KS, Sekitani T, Skrabalak S, Sood AK, Voets IK, Wang S, Wang S, Wee ATS, Ye J. Buriak JM, et al. Among authors: akinwande d. ACS Nano. 2023 Mar 14;17(5):4091-4093. doi: 10.1021/acsnano.3c01544. Epub 2023 Feb 27. ACS Nano. 2023. PMID: 36848601 No abstract available.

3

CMOS-compatible synthesis of large-area, high-mobility graphene by chemical vapor deposition of acetylene on cobalt thin films.

Ramón ME, Gupta A, Corbet C, Ferrer DA, Movva HC, Carpenter G, Colombo L, Bourianoff G, Doczy M, Akinwande D, Tutuc E, Banerjee SK. Ramón ME, et al. Among authors: akinwande d. ACS Nano. 2011 Sep 27;5(9):7198-204. doi: 10.1021/nn202012m. Epub 2011 Aug 5. ACS Nano. 2011. PMID: 21800895

4

Selective-area fluorination of graphene with fluoropolymer and laser irradiation.

Lee WH, Suk JW, Chou H, Lee J, Hao Y, Wu Y, Piner R, Akinwande D, Kim KS, Ruoff RS. Lee WH, et al. Among authors: akinwande d. Nano Lett. 2012 May 9;12(5):2374-8. doi: 10.1021/nl300346j. Epub 2012 Apr 6. Nano Lett. 2012. PMID: 22482878

5

Enhancement of the electrical properties of graphene grown by chemical vapor deposition via controlling the effects of polymer residue.

Suk JW, Lee WH, Lee J, Chou H, Piner RD, Hao Y, Akinwande D, Ruoff RS. Suk JW, et al. Among authors: akinwande d. Nano Lett. 2013 Apr 10;13(4):1462-7. doi: 10.1021/nl304420b. Epub 2013 Mar 19. Nano Lett. 2013. PMID: 23510359

6

High-performance, highly bendable MoS2 transistors with high-k dielectrics for flexible low-power systems.

Chang HY, Yang S, Lee J, Tao L, Hwang WS, Jena D, Lu N, Akinwande D. Chang HY, et al. Among authors: akinwande d. ACS Nano. 2013 Jun 25;7(6):5446-52. doi: 10.1021/nn401429w. Epub 2013 May 15. ACS Nano. 2013. PMID: 23668386

7

Graphene synthesis via magnetic inductive heating of copper substrates.

Piner R, Li H, Kong X, Tao L, Kholmanov IN, Ji H, Lee WH, Suk JW, Ye J, Hao Y, Chen S, Magnuson CW, Ismach AF, Akinwande D, Ruoff RS. Piner R, et al. Among authors: akinwande d. ACS Nano. 2013 Sep 24;7(9):7495-9. doi: 10.1021/nn4031564. Epub 2013 Aug 16. ACS Nano. 2013. PMID: 23930903

8

25 GHz embedded-gate graphene transistors with high-k dielectrics on extremely flexible plastic sheets.

Lee J, Ha TJ, Li H, Parrish KN, Holt M, Dodabalapur A, Ruoff RS, Akinwande D. Lee J, et al. Among authors: akinwande d. ACS Nano. 2013 Sep 24;7(9):7744-50. doi: 10.1021/nn403487y. Epub 2013 Aug 19. ACS Nano. 2013. PMID: 23941439

9

Toward 300 mm wafer-scalable high-performance polycrystalline chemical vapor deposited graphene transistors.

Rahimi S, Tao L, Chowdhury SF, Park S, Jouvray A, Buttress S, Rupesinghe N, Teo K, Akinwande D. Rahimi S, et al. Among authors: akinwande d. ACS Nano. 2014 Oct 28;8(10):10471-9. doi: 10.1021/nn5038493. Epub 2014 Sep 15. ACS Nano. 2014. PMID: 25198884

10

Pressure-dependent optical and vibrational properties of monolayer molybdenum disulfide.

Nayak AP, Pandey T, Voiry D, Liu J, Moran ST, Sharma A, Tan C, Chen CH, Li LJ, Chhowalla M, Lin JF, Singh AK, Akinwande D. Nayak AP, et al. Among authors: akinwande d. Nano Lett. 2015 Jan 14;15(1):346-53. doi: 10.1021/nl5036397. Epub 2014 Dec 18. Nano Lett. 2015. PMID: 25486455

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