Grützmacher D - Search Results

1

Simultaneous integration of different nanowires on single textured Si (100) substrates.

Rieger T, Rosenbach D, Mussler G, Schäpers T, Grützmacher D, Lepsa MI. Rieger T, et al. Among authors: grutzmacher d. Nano Lett. 2015 Mar 11;15(3):1979-86. doi: 10.1021/nl504854v. Epub 2015 Feb 9. Nano Lett. 2015. PMID: 25650521

2

Three-dimensional Si/Ge quantum dot crystals.

Grützmacher D, Fromherz T, Dais C, Stangl J, Müller E, Ekinci Y, Solak HH, Sigg H, Lechner RT, Wintersberger E, Birner S, Holý V, Bauer G. Grützmacher D, et al. Nano Lett. 2007 Oct;7(10):3150-6. doi: 10.1021/nl0717199. Epub 2007 Sep 25. Nano Lett. 2007. PMID: 17892317

3

Continuous voltage tunability of intersubband relaxation times in coupled SiGe quantum well structures using ultrafast spectroscopy.

Rauter P, Fromherz T, Vinh NQ, Murdin BN, Mussler G, Grützmacher D, Bauer G. Rauter P, et al. Among authors: grutzmacher d. Phys Rev Lett. 2009 Apr 10;102(14):147401. doi: 10.1103/PhysRevLett.102.147401. Epub 2009 Apr 6. Phys Rev Lett. 2009. PMID: 19392480 Free article.

4

Electronic phase coherence in InAs nanowires.

Blömers Ch, Lepsa MI, Luysberg M, Grützmacher D, Lüth H, Schäpers T. Blömers Ch, et al. Among authors: grutzmacher d. Nano Lett. 2011 Sep 14;11(9):3550-6. doi: 10.1021/nl201102a. Epub 2011 Aug 30. Nano Lett. 2011. PMID: 21848307

5

Manipulating InAs nanowires with submicrometer precision.

Flöhr K, Liebmann M, Sladek K, Günel HY, Frielinghaus R, Haas F, Meyer C, Hardtdegen H, Schäpers T, Grützmacher D, Morgenstern M. Flöhr K, et al. Among authors: grutzmacher d. Rev Sci Instrum. 2011 Nov;82(11):113705. doi: 10.1063/1.3657135. Rev Sci Instrum. 2011. PMID: 22128982

6

Electronic transport with dielectric confinement in degenerate InN nanowires.

Blömers Ch, Lu JG, Huang L, Witte C, Grützmacher D, Lüth H, Schäpers T. Blömers Ch, et al. Among authors: grutzmacher d. Nano Lett. 2012 Jun 13;12(6):2768-72. doi: 10.1021/nl204500r. Epub 2012 May 4. Nano Lett. 2012. PMID: 22494319

7

Electrical spin injection into InN semiconductor nanowires.

Heedt S, Morgan C, Weis K, Bürgler DE, Calarco R, Hardtdegen H, Grützmacher D, Schäpers T. Heedt S, et al. Among authors: grutzmacher d. Nano Lett. 2012 Sep 12;12(9):4437-43. doi: 10.1021/nl301052g. Epub 2012 Aug 21. Nano Lett. 2012. PMID: 22889199

8

Molecular beam epitaxy growth of GaAs/InAs core-shell nanowires and fabrication of InAs nanotubes.

Rieger T, Luysberg M, Schäpers T, Grützmacher D, Lepsa MI. Rieger T, et al. Among authors: grutzmacher d. Nano Lett. 2012 Nov 14;12(11):5559-64. doi: 10.1021/nl302502b. Epub 2012 Oct 12. Nano Lett. 2012. PMID: 23030380

9

Realization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowires.

Blömers C, Rieger T, Zellekens P, Haas F, Lepsa MI, Hardtdegen H, Gül O, Demarina N, Grützmacher D, Lüth H, Schäpers T. Blömers C, et al. Among authors: grutzmacher d. Nanotechnology. 2013 Jan 25;24(3):035203. doi: 10.1088/0957-4484/24/3/035203. Epub 2012 Dec 21. Nanotechnology. 2013. PMID: 23263179

10

Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires.

Haas F, Sladek K, Winden A, von der Ahe M, Weirich TE, Rieger T, Lüth H, Grützmacher D, Schäpers T, Hardtdegen H. Haas F, et al. Among authors: grutzmacher d. Nanotechnology. 2013 Mar 1;24(8):085603. doi: 10.1088/0957-4484/24/8/085603. Epub 2013 Feb 5. Nanotechnology. 2013. PMID: 23385879

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