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Wide Band Gap Semiconductor from a Hidden 2D Incommensurate Graphene Phase.
Conrad M, Wang F, Nevius M, Jinkins K, Celis A, Narayanan Nair M, Taleb-Ibrahimi A, Tejeda A, Garreau Y, Vlad A, Coati A, Miceli PF, Conrad EH. Conrad M, et al. Nano Lett. 2017 Jan 11;17(1):341-347. doi: 10.1021/acs.nanolett.6b04196. Epub 2016 Dec 21. Nano Lett. 2017. PMID: 27981850
Semiconducting Graphene from Highly Ordered Substrate Interactions.
Nevius MS, Conrad M, Wang F, Celis A, Nair MN, Taleb-Ibrahimi A, Tejeda A, Conrad EH. Nevius MS, et al. Phys Rev Lett. 2015 Sep 25;115(13):136802. doi: 10.1103/PhysRevLett.115.136802. Epub 2015 Sep 21. Phys Rev Lett. 2015. PMID: 26451574
Wide-gap semiconducting graphene from nitrogen-seeded SiC.
Wang F, Liu G, Rothwell S, Nevius M, Tejeda A, Taleb-Ibrahimi A, Feldman LC, Cohen PI, Conrad EH. Wang F, et al. Nano Lett. 2013 Oct 9;13(10):4827-32. doi: 10.1021/nl402544n. Epub 2013 Sep 23. Nano Lett. 2013. PMID: 24060338
The bottom-up growth of edge specific graphene nanoribbons.
Nevius MS, Wang F, Mathieu C, Barrett N, Sala A, Menteş TO, Locatelli A, Conrad EH. Nevius MS, et al. Nano Lett. 2014 Nov 12;14(11):6080-6. doi: 10.1021/nl502942z. Epub 2014 Oct 6. Nano Lett. 2014. PMID: 25254434