Skip to main page content
U.S. flag

An official website of the United States government

Dot gov

The .gov means it’s official.
Federal government websites often end in .gov or .mil. Before sharing sensitive information, make sure you’re on a federal government site.

Https

The site is secure.
The https:// ensures that you are connecting to the official website and that any information you provide is encrypted and transmitted securely.

Access keys NCBI Homepage MyNCBI Homepage Main Content Main Navigation

Search Page

Filters

My NCBI Filters

Text availability

Article attribute

Article type

Publication date

Search Results

18 results

Filters applied: . Clear all
Results are displayed in a computed author sort order. The Results By Year timeline is not available.
Page 1
Class-A dual-frequency VECSEL at telecom wavelength.
De S, Baili G, Alouini M, Harmand JC, Bouchoule S, Bretenaker F. De S, et al. Among authors: bouchoule s. Opt Lett. 2014 Oct 1;39(19):5586-9. doi: 10.1364/OL.39.005586. Opt Lett. 2014. PMID: 25360934
Liquid crystal-based tunable photodetector operating in the telecom C-band.
Levallois C, Sadani B, Boisnard B, Camps T, Paranthoën C, Pes S, Bouchoule S, Dupont L, Doucet JB, Alouini M, Bardinal V. Levallois C, et al. Among authors: bouchoule s. Opt Express. 2018 Oct 1;26(20):25952-25961. doi: 10.1364/OE.26.025952. Opt Express. 2018. PMID: 30469689 Free article.
High-Q planar organic-inorganic Perovskite-based microcavity.
Han Z, Nguyen HS, Boitier F, Wei Y, Abdel-Baki K, Lauret JS, Bloch J, Bouchoule S, Deleporte E. Han Z, et al. Among authors: bouchoule s. Opt Lett. 2012 Dec 15;37(24):5061-3. doi: 10.1364/OL.37.005061. Opt Lett. 2012. PMID: 23258005
Optical bistability in a GaAs-based polariton diode.
Bajoni D, Semenova E, Lemaître A, Bouchoule S, Wertz E, Senellart P, Barbay S, Kuszelewicz R, Bloch J. Bajoni D, et al. Among authors: bouchoule s. Phys Rev Lett. 2008 Dec 31;101(26):266402. doi: 10.1103/PhysRevLett.101.266402. Phys Rev Lett. 2008. PMID: 19113780
Continuous-wave operation of photonic band-edge laser near 1.55 microm on silicon wafer.
Vecchi G, Raineri F, Sagnes I, Yacomotti A, Monnier P, Karle TJ, Lee KH, Braive R, Le Gratiet L, Guilet S, Beaudoin G, Taneau A, Bouchoule S, Levenson A, Raj R. Vecchi G, et al. Among authors: bouchoule s. Opt Express. 2007 Jun 11;15(12):7551-6. doi: 10.1364/oe.15.007551. Opt Express. 2007. PMID: 19547080 Free article.
18 results