Ronning C - Search Results

1

Röder R, Wille M, Geburt S, Rensberg J, Zhang M, Lu JG, Capasso F, Buschlinger R, Peschel U, Ronning C. Röder R, et al. Among authors: ronning c. Nano Lett. 2013 Aug 14;13(8):3602-6. doi: 10.1021/nl401355b. Epub 2013 Jul 22. Nano Lett. 2013. PMID: 23862660

2

Scalable fabrication of nanowire photonic and electronic circuits using spin-on glass.

Zimmler MA, Stichtenoth D, Ronning C, Yi W, Narayanamurti V, Voss T, Capasso F. Zimmler MA, et al. Among authors: ronning c. Nano Lett. 2008 Jun;8(6):1695-9. doi: 10.1021/nl080627w. Epub 2008 May 8. Nano Lett. 2008. PMID: 18462004

3

Rare earth doped zinc oxide nanowires.

Geburt S, Stichtenoth D, Müller S, Dewald W, Ronning C, Wang J, Jiao Y, Rao YY, Hark SK, Li Q. Geburt S, et al. Among authors: ronning c. J Nanosci Nanotechnol. 2008 Jan;8(1):244-51. doi: 10.1166/jnn.2008.n05. J Nanosci Nanotechnol. 2008. PMID: 18468067

4

Alignment of semiconductor nanowires using ion beams.

Borschel C, Niepelt R, Geburt S, Gutsche C, Regolin I, Prost W, Tegude FJ, Stichtenoth D, Schwen D, Ronning C. Borschel C, et al. Among authors: ronning c. Small. 2009 Nov;5(22):2576-80. doi: 10.1002/smll.200900562. Small. 2009. PMID: 19714732

5

Defect induced changes on the excitation transfer dynamics in ZnS/Mn nanowires.

Kaiser U, Chen L, Geburt S, Ronning C, Heimbrodt W. Kaiser U, et al. Among authors: ronning c. Nanoscale Res Lett. 2011 Mar 16;6(1):228. doi: 10.1186/1556-276X-6-228. Nanoscale Res Lett. 2011. PMID: 21711734 Free PMC article.

6

A new route toward semiconductor nanospintronics: highly Mn-doped GaAs nanowires realized by ion-implantation under dynamic annealing conditions.

Borschel C, Messing ME, Borgström MT, Paschoal W, Wallentin J, Kumar S, Mergenthaler K, Deppert K, Canali CM, Pettersson H, Samuelson L, Ronning C. Borschel C, et al. Among authors: ronning c. Nano Lett. 2011 Sep 14;11(9):3935-40. doi: 10.1021/nl2021653. Epub 2011 Aug 22. Nano Lett. 2011. PMID: 21848314

7

Nano-X-ray absorption spectroscopy of single Co-implanted ZnO nanowires.

Segura-Ruiz J, Martínez-Criado G, Chu MH, Geburt S, Ronning C. Segura-Ruiz J, et al. Among authors: ronning c. Nano Lett. 2011 Dec 14;11(12):5322-6. doi: 10.1021/nl202799e. Epub 2011 Oct 26. Nano Lett. 2011. PMID: 22007972

8

Direct determination of minority carrier diffusion lengths at axial GaAs nanowire p-n junctions.

Gutsche C, Niepelt R, Gnauck M, Lysov A, Prost W, Ronning C, Tegude FJ. Gutsche C, et al. Among authors: ronning c. Nano Lett. 2012 Mar 14;12(3):1453-8. doi: 10.1021/nl204126n. Epub 2012 Feb 29. Nano Lett. 2012. PMID: 22364406

9

Low threshold room-temperature lasing of CdS nanowires.

Geburt S, Thielmann A, Röder R, Borschel C, McDonnell A, Kozlik M, Kühnel J, Sunter KA, Capasso F, Ronning C. Geburt S, et al. Among authors: ronning c. Nanotechnology. 2012 Sep 14;23(36):365204. doi: 10.1088/0957-4484/23/36/365204. Epub 2012 Aug 21. Nanotechnology. 2012. PMID: 22910065

10

Amphoteric nature of Sn in CdS nanowires.

Zhang M, Wille M, Röder R, Heedt S, Huang L, Zhu Z, Geburt S, Grützmacher D, Schäpers T, Ronning C, Lu JG. Zhang M, et al. Among authors: ronning c. Nano Lett. 2014 Feb 12;14(2):518-23. doi: 10.1021/nl4035169. Epub 2014 Jan 27. Nano Lett. 2014. PMID: 24447178

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