Patriarche G - Search Results

1

Growth of vertical GaAs nanowires on an amorphous substrate via a fiber-textured Si platform.

Cohin Y, Mauguin O, Largeau L, Patriarche G, Glas F, Søndergård E, Harmand JC. Cohin Y, et al. Among authors: patriarche g. Nano Lett. 2013 Jun 12;13(6):2743-7. doi: 10.1021/nl400924c. Nano Lett. 2013. PMID: 23668839

2

Determination of the local concentrations of Mn interstitials and antisite defects in GaMnAs.

Glas F, Patriarche G, Largeau L, Lemaître A. Glas F, et al. Among authors: patriarche g. Phys Rev Lett. 2004 Aug 20;93(8):086107. doi: 10.1103/PhysRevLett.93.086107. Epub 2004 Aug 19. Phys Rev Lett. 2004. PMID: 15447206

3

Growth and characterization of InP nanowires with InAsP insertions.

Tchernycheva M, Cirlin GE, Patriarche G, Travers L, Zwiller V, Perinetti U, Harmand JC. Tchernycheva M, et al. Among authors: patriarche g. Nano Lett. 2007 Jun;7(6):1500-4. doi: 10.1021/nl070228l. Epub 2007 May 5. Nano Lett. 2007. PMID: 17480113

4

Why does wurtzite form in nanowires of III-V zinc blende semiconductors?

Glas F, Harmand JC, Patriarche G. Glas F, et al. Among authors: patriarche g. Phys Rev Lett. 2007 Oct 5;99(14):146101. doi: 10.1103/PhysRevLett.99.146101. Epub 2007 Oct 5. Phys Rev Lett. 2007. PMID: 17930689

5

Wurtzite to zinc blende phase transition in GaAs nanowires induced by epitaxial burying.

Patriarche G, Glas F, Tchernycheva M, Sartel C, Largeau L, Harmand JC, Cirlin GE. Patriarche G, et al. Nano Lett. 2008 Jun;8(6):1638-43. doi: 10.1021/nl080319y. Epub 2008 May 10. Nano Lett. 2008. PMID: 18471022

6

Nucleation antibunching in catalyst-assisted nanowire growth.

Glas F, Harmand JC, Patriarche G. Glas F, et al. Among authors: patriarche g. Phys Rev Lett. 2010 Apr 2;104(13):135501. doi: 10.1103/PhysRevLett.104.135501. Epub 2010 Mar 31. Phys Rev Lett. 2010. PMID: 20481891

7

Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy.

Galopin E, Largeau L, Patriarche G, Travers L, Glas F, Harmand JC. Galopin E, et al. Among authors: patriarche g. Nanotechnology. 2011 Jun 17;22(24):245606. doi: 10.1088/0957-4484/22/24/245606. Epub 2011 Apr 21. Nanotechnology. 2011. PMID: 21508494

8

Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy.

Tchernycheva M, Harmand JC, Patriarche G, Travers L, Cirlin GE. Tchernycheva M, et al. Among authors: patriarche g. Nanotechnology. 2006 Aug 28;17(16):4025-30. doi: 10.1088/0957-4484/17/16/005. Epub 2006 Jul 14. Nanotechnology. 2006. PMID: 21727532

9

Zinc blende GaAsSb nanowires grown by molecular beam epitaxy.

Dheeraj DL, Patriarche G, Largeau L, Zhou HL, van Helvoort AT, Glas F, Harmand JC, Fimland BO, Weman H. Dheeraj DL, et al. Among authors: patriarche g. Nanotechnology. 2008 Jul 9;19(27):275605. doi: 10.1088/0957-4484/19/27/275605. Epub 2008 May 28. Nanotechnology. 2008. PMID: 21828712

10

Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy.

Pantzas K, Patriarche G, Troadec D, Gautier S, Moudakir T, Suresh S, Largeau L, Mauguin O, Voss PL, Ougazzaden A. Pantzas K, et al. Among authors: patriarche g. Nanotechnology. 2012 Nov 16;23(45):455707. doi: 10.1088/0957-4484/23/45/455707. Epub 2012 Oct 22. Nanotechnology. 2012. PMID: 23089619

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