Tosun M - Search Results

1

High-resolution resistless nanopatterning on polymer and flexible substrates for plasmonic biosensing using stencil masks.

Vazquez-Mena O, Sannomiya T, Tosun M, Villanueva LG, Savu V, Voros J, Brugger J. Vazquez-Mena O, et al. Among authors: tosun m. ACS Nano. 2012 Jun 26;6(6):5474-81. doi: 10.1021/nn301358n. Epub 2012 May 22. ACS Nano. 2012. PMID: 22594808

2

Performance enhancement of a graphene-zinc phosphide solar cell using the electric field-effect.

Vazquez-Mena O, Bosco JP, Ergen O, Rasool HI, Fathalizadeh A, Tosun M, Crommie M, Javey A, Atwater HA, Zettl A. Vazquez-Mena O, et al. Among authors: tosun m. Nano Lett. 2014 Aug 13;14(8):4280-5. doi: 10.1021/nl500925n. Epub 2014 Jul 29. Nano Lett. 2014. PMID: 25058004

3

Air-Stable n-Doping of WSe2 by Anion Vacancy Formation with Mild Plasma Treatment.

Tosun M, Chan L, Amani M, Roy T, Ahn GH, Taheri P, Carraro C, Ager JW, Maboudian R, Javey A. Tosun M, et al. ACS Nano. 2016 Jul 26;10(7):6853-60. doi: 10.1021/acsnano.6b02521. Epub 2016 Jun 22. ACS Nano. 2016. PMID: 27294286

4

Field-effect transistors built from all two-dimensional material components.

Roy T, Tosun M, Kang JS, Sachid AB, Desai SB, Hettick M, Hu CC, Javey A. Roy T, et al. Among authors: tosun m. ACS Nano. 2014 Jun 24;8(6):6259-64. doi: 10.1021/nn501723y. Epub 2014 May 7. ACS Nano. 2014. PMID: 24779528 Free article.

5

High-gain inverters based on WSe2 complementary field-effect transistors.

Tosun M, Chuang S, Fang H, Sachid AB, Hettick M, Lin Y, Zeng Y, Javey A. Tosun M, et al. ACS Nano. 2014 May 27;8(5):4948-53. doi: 10.1021/nn5009929. Epub 2014 Apr 3. ACS Nano. 2014. PMID: 24684575

6

Air stable p-doping of WSe2 by covalent functionalization.

Zhao P, Kiriya D, Azcatl A, Zhang C, Tosun M, Liu YS, Hettick M, Kang JS, McDonnell S, Santosh KC, Guo J, Cho K, Wallace RM, Javey A. Zhao P, et al. Among authors: tosun m. ACS Nano. 2014 Oct 28;8(10):10808-14. doi: 10.1021/nn5047844. Epub 2014 Sep 22. ACS Nano. 2014. PMID: 25229426

7

Dual-gated MoS2/WSe2 van der Waals tunnel diodes and transistors.

Roy T, Tosun M, Cao X, Fang H, Lien DH, Zhao P, Chen YZ, Chueh YL, Guo J, Javey A. Roy T, et al. Among authors: tosun m. ACS Nano. 2015 Feb 24;9(2):2071-9. doi: 10.1021/nn507278b. Epub 2015 Jan 26. ACS Nano. 2015. PMID: 25598307

8

Degenerate n-doping of few-layer transition metal dichalcogenides by potassium.

Fang H, Tosun M, Seol G, Chang TC, Takei K, Guo J, Javey A. Fang H, et al. Among authors: tosun m. Nano Lett. 2013 May 8;13(5):1991-5. doi: 10.1021/nl400044m. Epub 2013 Apr 11. Nano Lett. 2013. PMID: 23570647

9

Electromechanical oscillations in bilayer graphene.

Benameur MM, Gargiulo F, Manzeli S, Autès G, Tosun M, Yazyev OV, Kis A. Benameur MM, et al. Among authors: tosun m. Nat Commun. 2015 Oct 20;6:8582. doi: 10.1038/ncomms9582. Nat Commun. 2015. PMID: 26481767 Free PMC article.

10

MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts.

Chuang S, Battaglia C, Azcatl A, McDonnell S, Kang JS, Yin X, Tosun M, Kapadia R, Fang H, Wallace RM, Javey A. Chuang S, et al. Among authors: tosun m. Nano Lett. 2014 Mar 12;14(3):1337-42. doi: 10.1021/nl4043505. Epub 2014 Feb 27. Nano Lett. 2014. PMID: 24568656

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