Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures.
Radek M, Liedke B, Schmidt B, Voelskow M, Bischoff L, Hansen JL, Larsen AN, Bougeard D, Böttger R, Prucnal S, Posselt M, Bracht H.
Radek M, et al. Among authors: posselt m.
Materials (Basel). 2017 Jul 17;10(7):813. doi: 10.3390/ma10070813.
Materials (Basel). 2017.
PMID: 28773172
Free PMC article.