Oehler F - Search Results

1

Growth and characterization of gold catalyzed SiGe nanowires and alternative metal-catalyzed Si nanowires.

Potié A, Baron T, Dhalluin F, Rosaz G, Salem B, Latu-Romain L, Kogelschatz M, Gentile P, Oehler F, Montès L, Kreisel J, Roussel H. Potié A, et al. Among authors: oehler f. Nanoscale Res Lett. 2011 Mar 1;6(1):187. doi: 10.1186/1556-276X-6-187. Nanoscale Res Lett. 2011. PMID: 21711709 Free PMC article.

2

Control of gold surface diffusion on si nanowires.

den Hertog MI, Rouviere JL, Dhalluin F, Desré PJ, Gentile P, Ferret P, Oehler F, Baron T. den Hertog MI, et al. Among authors: oehler f. Nano Lett. 2008 May;8(5):1544-50. doi: 10.1021/nl073356i. Epub 2008 Apr 19. Nano Lett. 2008. PMID: 18422363

3

The morphology of silicon nanowires grown in the presence of trimethylaluminium.

Oehler F, Gentile P, Baron T, Hertog MD, Rouvière J, Ferret P. Oehler F, et al. Nanotechnology. 2009 Jun 17;20(24):245602. doi: 10.1088/0957-4484/20/24/245602. Epub 2009 May 27. Nanotechnology. 2009. PMID: 19471089

4

Recombination dynamics of spatially confined electron-hole system in luminescent gold catalyzed silicon nanowires.

Demichel O, Calvo V, Pauc N, Besson A, Noé P, Oehler F, Gentile P, Magnea N. Demichel O, et al. Among authors: oehler f. Nano Lett. 2009 Jul;9(7):2575-8. doi: 10.1021/nl900739a. Nano Lett. 2009. PMID: 19583280

5

The effects of HCl on silicon nanowire growth: surface chlorination and existence of a 'diffusion-limited minimum diameter'.

Oehler F, Gentile P, Baron T, Ferret P. Oehler F, et al. Nanotechnology. 2009 Nov 25;20(47):475307. doi: 10.1088/0957-4484/20/47/475307. Epub 2009 Oct 29. Nanotechnology. 2009. PMID: 19875870

6

Surface recombination velocity measurements of efficiently passivated gold-catalyzed silicon nanowires by a new optical method.

Demichel O, Calvo V, Besson A, Noé P, Salem B, Pauc N, Oehler F, Gentile P, Magnea N. Demichel O, et al. Among authors: oehler f. Nano Lett. 2010 Jul 14;10(7):2323-9. doi: 10.1021/nl903166t. Nano Lett. 2010. PMID: 20503995

7

The importance of the radial growth in the faceting of silicon nanowires.

Oehler F, Gentile P, Baron T, Ferret P, Hertog MD, Rouvière J. Oehler F, et al. Nano Lett. 2010 Jul 14;10(7):2335-41. doi: 10.1021/nl904081g. Nano Lett. 2010. PMID: 20521833

8

Hidden defects in silicon nanowires.

den Hertog MI, Cayron C, Gentile P, Dhalluin F, Oehler F, Baron T, Rouviere JL. den Hertog MI, et al. Among authors: oehler f. Nanotechnology. 2012 Jan 20;23(2):025701. doi: 10.1088/0957-4484/23/2/025701. Nanotechnology. 2012. PMID: 22166492

9

Effect of HCl on the doping and shape control of silicon nanowires.

Gentile P, Solanki A, Pauc N, Oehler F, Salem B, Rosaz G, Baron T, Den Hertog M, Calvo V. Gentile P, et al. Among authors: oehler f. Nanotechnology. 2012 Jun 1;23(21):215702. doi: 10.1088/0957-4484/23/21/215702. Epub 2012 May 3. Nanotechnology. 2012. PMID: 22551776

10

Stable and high yield growth of GaP and In_0.2Ga_0.8As nanowire arrays using In as a catalyst.

Scaccabarozzi A, Cattoni A, Patriarche G, Travers L, Collin S, Harmand JC, Glas F, Oehler F. Scaccabarozzi A, et al. Among authors: oehler f. Nanoscale. 2020 Sep 17;12(35):18240-18248. doi: 10.1039/d0nr04139d. Nanoscale. 2020. PMID: 32856654

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