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Characterization of inhomogeneity in silicon dioxide films on 4H-silicon carbide epitaxial substrate using a combination of Fourier transform infrared and cathodoluminescence spectroscopy.
Appl Spectrosc. 2014;68(10):1176-80. doi: 10.1366/13-07365. Epub 2014 Oct 1.
Appl Spectrosc. 2014.
PMID: 25198339
Abnormal behavior of longitudinal optical phonon in silicon dioxide films on 4H-SiC bulk epitaxial substrate using Fourier transform infrared (FT-IR) spectroscopy.
Yoshikawa M, Seki H, Yamane T, Nanen Y, Kato M, Kimoto T.
Yoshikawa M, et al. Among authors: nanen y.
Appl Spectrosc. 2013 May;67(5):542-5. doi: 10.1366/12-06873.
Appl Spectrosc. 2013.
PMID: 23643043
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Characterization of silicon dioxide films on a 4H-SiC Si(0001) face by fourier transform infrared (FT-IR) spectroscopy and cathodoluminescence spectroscopy.
Yoshikawa M, Seki H, Inoue K, Matsuda K, Tanahashi Y, Sako H, Nanen Y, Kato M, Kimoto T.
Yoshikawa M, et al. Among authors: nanen y.
Appl Spectrosc. 2011 May;65(5):543-8. doi: 10.1366/10-06186.
Appl Spectrosc. 2011.
PMID: 21513598
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