Wernersson LE - Search Results

1

Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.

Egard M, Johansson S, Johansson AC, Persson KM, Dey AW, Borg BM, Thelander C, Wernersson LE, Lind E. Egard M, et al. Among authors: wernersson le. Nano Lett. 2010 Mar 10;10(3):809-12. doi: 10.1021/nl903125m. Nano Lett. 2010. PMID: 20131812

2

Time-resolved X-ray diffraction investigation of the modified phonon dispersion in InSb nanowires.

Jurgilaitis A, Enquist H, Andreasson BP, Persson AI, Borg BM, Caroff P, Dick KA, Harb M, Linke H, Nüske R, Wernersson LE, Larsson J. Jurgilaitis A, et al. Among authors: wernersson le. Nano Lett. 2014 Feb 12;14(2):541-6. doi: 10.1021/nl403596b. Epub 2014 Jan 13. Nano Lett. 2014. PMID: 24387246

3

Measurements of light absorption efficiency in InSb nanowires.

Jurgilaitis A, Enquist H, Harb M, Dick KA, Borg BM, Nüske R, Wernersson LE, Larsson J. Jurgilaitis A, et al. Among authors: wernersson le. Struct Dyn. 2013 Dec 10;1(1):014502. doi: 10.1063/1.4833559. eCollection 2014 Jan. Struct Dyn. 2013. PMID: 26913673 Free PMC article.

4

Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs.

Vasen T, Ramvall P, Afzalian A, Doornbos G, Holland M, Thelander C, Dick KA, Wernersson L-, Passlack M. Vasen T, et al. Sci Rep. 2019 Jan 17;9(1):202. doi: 10.1038/s41598-018-36549-z. Sci Rep. 2019. PMID: 30655575 Free PMC article.

5

Analysing the capacitance-voltage measurements of vertical wrapped-gated nanowires.

Karlström O, Wacker A, Nilsson K, Astromskas G, Roddaro S, Samuelson L, Wernersson LE. Karlström O, et al. Among authors: wernersson le. Nanotechnology. 2008 Oct 29;19(43):435201. doi: 10.1088/0957-4484/19/43/435201. Epub 2008 Sep 22. Nanotechnology. 2008. PMID: 21832684

6

Correlation-induced conductance suppression at level degeneracy in a quantum dot.

Nilsson HA, Karlström O, Larsson M, Caroff P, Pedersen JN, Samuelson L, Wacker A, Wernersson LE, Xu HQ. Nilsson HA, et al. Among authors: wernersson le. Phys Rev Lett. 2010 May 7;104(18):186804. doi: 10.1103/PhysRevLett.104.186804. Epub 2010 May 4. Phys Rev Lett. 2010. PMID: 20482198

7

Geometric control of diffusing elements on InAs semiconductor surfaces via metal contacts.

Benter S, Jönsson A, Johansson J, Zhu L, Golias E, Wernersson LE, Mikkelsen A. Benter S, et al. Among authors: wernersson le. Nat Commun. 2023 Jul 27;14(1):4541. doi: 10.1038/s41467-023-40157-5. Nat Commun. 2023. PMID: 37500640 Free PMC article.

8

Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor.

Zhu Z, Persson AEO, Wernersson LE. Zhu Z, et al. Among authors: wernersson le. Nat Commun. 2023 May 3;14(1):2530. doi: 10.1038/s41467-023-38242-w. Nat Commun. 2023. PMID: 37137907 Free PMC article.

9

Effects of Interface Oxidation on Noise Properties and Performance in III-V Vertical Nanowire Memristors.

Saketh Ram M, Svensson J, Wernersson LE. Saketh Ram M, et al. Among authors: wernersson le. ACS Appl Mater Interfaces. 2023 Apr 19;15(15):19085-19091. doi: 10.1021/acsami.2c21669. Epub 2023 Apr 7. ACS Appl Mater Interfaces. 2023. PMID: 37026413 Free PMC article.

10

Sensing single domains and individual defects in scaled ferroelectrics.

Zhu Z, Persson AEO, Wernersson LE. Zhu Z, et al. Among authors: wernersson le. Sci Adv. 2023 Feb 3;9(5):eade7098. doi: 10.1126/sciadv.ade7098. Epub 2023 Feb 3. Sci Adv. 2023. PMID: 36735784 Free PMC article.

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