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Direct proof of two-electron occupation of Ge-DX centers in GaAs codoped with Ge and Te.
Phys Rev Lett. 1993 Nov 22;71(21):3529-3532. doi: 10.1103/PhysRevLett.71.3529.
Phys Rev Lett. 1993.
PMID: 10055000
No abstract available.
Model of the metastable center in indium antimonide: Comment on "Pressure-dependent compensation in InSb".
Piotrzkowski R, Dmowski L, Baj M, Konczykowski M, Litwin-Staszewska E.
Piotrzkowski R, et al.
Phys Rev B Condens Matter. 1985 Aug 15;32(4):2649-2652. doi: 10.1103/physrevb.32.2649.
Phys Rev B Condens Matter. 1985.
PMID: 9937351
No abstract available.
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Investigation of the DX center in heavily doped n-GaAs.
Maude DK, Portal JC, Dmowski L, Foster T, Eaves L, Nathan M, Heiblum M, Harris JJ, Beall RB.
Maude DK, et al.
Phys Rev Lett. 1987 Aug 17;59(7):815-818. doi: 10.1103/PhysRevLett.59.815.
Phys Rev Lett. 1987.
PMID: 10035878
No abstract available.
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High pressure and DX centers in heavily doped bulk GaAs.
Suski T, Piotrzkowski R, Wisniewski P, Litwin-Staszewska E, Dmowski L.
Suski T, et al.
Phys Rev B Condens Matter. 1989 Aug 15;40(6):4012-4021. doi: 10.1103/physrevb.40.4012.
Phys Rev B Condens Matter. 1989.
PMID: 9992375
No abstract available.
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Deformation potential in a high-electron-mobility GaAs/Ga0.7Al0.3As heterostructure: Hydrostatic-pressure studies.
Gorczyca I I, Suski T, Litwin-Staszewska E, Dmowski L, Krupski J, Etienne B.
Gorczyca I I, et al.
Phys Rev B Condens Matter. 1992 Aug 15;46(7):4328-4331. doi: 10.1103/physrevb.46.4328.
Phys Rev B Condens Matter. 1992.
PMID: 10004179
No abstract available.
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Spatial correlations of remote impurity charges: Mechanism responsible for the high mobility of a two-dimensional electron gas.
Suski T, Wisniewski P, Gorczyca I I, Dmowski LH, Piotrzkowski R, Sobkowicz P, Smoliner J, Gornik E, Böhm G, Weimann G.
Suski T, et al. Among authors: dmowski lh.
Phys Rev B Condens Matter. 1994 Jul 15;50(4):2723-2726. doi: 10.1103/physrevb.50.2723.
Phys Rev B Condens Matter. 1994.
PMID: 9976508
No abstract available.
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Magnetophonon resonance under hydrostatic pressure in GaAs-Al0.28Ga0.72As and Ga0.47In0.53As-Al0.48In0.52As heterojunctions.
Grégoris G, Beerens J, Ben Amor S, Dmowski L, Portal JC, Alexandre F, Sivco DL, Cho AY.
Grégoris G, et al.
Phys Rev B Condens Matter. 1988 Jan 15;37(3):1262-1272. doi: 10.1103/physrevb.37.1262.
Phys Rev B Condens Matter. 1988.
PMID: 9944634
No abstract available.
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Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement.
Guo L, Wang XQ, Zheng XT, Yang XL, Xu FJ, Tang N, Lu LW, Ge WK, Shen B, Dmowski LH, Suski T.
Guo L, et al. Among authors: dmowski lh.
Sci Rep. 2014 Mar 13;4:4371. doi: 10.1038/srep04371.
Sci Rep. 2014.
PMID: 24621830
Free PMC article.
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