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Improved electrical and reliability characteristics in metal/oxide/nitride/oxide/silicon capacitors with blocking oxide layers formed under the radical oxidation process.
J Nanosci Nanotechnol. 2010 Jul;10(7):4701-5. doi: 10.1166/jnn.2010.1697.
J Nanosci Nanotechnol. 2010.
PMID: 21128482
Gain-dependent linewidth enhancement factor in the quantum dot structures.
Kim KC, Han IK, Lee JI, Kim TG.
Kim KC, et al.
Nanotechnology. 2010 Apr 2;21(13):134010. doi: 10.1088/0957-4484/21/13/134010. Epub 2010 Mar 8.
Nanotechnology. 2010.
PMID: 20208117
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