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Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression.
Sci Rep. 2022 Nov 12;12(1):19380. doi: 10.1038/s41598-022-23951-x.
Sci Rep. 2022.
PMID: 36371536
Free PMC article.
Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors.
Kim JH, Jang JT, Bae JH, Choi SJ, Kim DM, Kim C, Kim Y, Kim DH.
Kim JH, et al.
Micromachines (Basel). 2021 Mar 19;12(3):327. doi: 10.3390/mi12030327.
Micromachines (Basel). 2021.
PMID: 33808738
Free PMC article.
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