Unrelaxation of the semiconductor surface at low-coverage Ag/InP(110) interfaces as determined by photoemission extended x-ray-absorption fine structure
Phys Rev B Condens Matter
.
1990 Apr 15;41(11):7576-7580.
doi: 10.1103/physrevb.41.7576.
Authors
KM Choudhary
,
PS Mangat
,
D Kilday
,
G Margaritondo
PMID:
9993050
DOI:
10.1103/physrevb.41.7576
No abstract available