Pressure-induced Hall-effect spectroscopy of silicon DX states in planar doped GaAs-AlAs superlattices
Phys Rev B Condens Matter
.
1995 Jun 15;51(23):16778-16784.
doi: 10.1103/physrevb.51.16778.
Authors
P Sellitto
,
J Sicart
,
JL Robert
,
R Planel
PMID:
9978685
DOI:
10.1103/physrevb.51.16778
No abstract available