Effect of oxygen on the migration of the carbon interstitial defect in silicon
Phys Rev B Condens Matter
.
1988 Mar 15;37(8):4175-4179.
doi: 10.1103/physrevb.37.4175.
Author
CA Londos
PMID:
9945054
DOI:
10.1103/physrevb.37.4175
No abstract available