Study of equivalent circuit of GaN based laser chip and packaged laser

Abstract

High-speed GaN-based lasers play a pivotal role in visible light communication (VLC) systems; however, the causes of the limited modulation response of our fabricated laser diode (LD) are not fully understood. Accordingly, we constructed an equivalent circuit model for both the LD and its packaging. This model enabled us to analyze the series resistance and parallel capacitance of the LD at different injection currents. Experiments and simulations were performed to investigate the intrinsic responses of the LD. The series resistance and parallel capacitance are responsible for S₂₁ roll-off at low frequencies. Determination of the packaging design parameters on the modulation response of a transistor outline (TO)-can packaged LD was investigated which is important to achieve the impedance match in the future. The value of each discrete component was determined by fitting the scattering parameters of the equivalent circuit model to the packaged LD. Reducing the series resistance and parallel capacitance improved the modulation response. Our study firstly illustrates the design and manufacture of violet-blue-green laser transmitters with a large modulation bandwidth for ultra-high-speed VLC from the point of the impedance influence.